All MOSFET. APT8035JN Datasheet

 

APT8035JN Datasheet and Replacement


   Type Designator: APT8035JN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 520 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 725 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
   Package: SOT-227
 

 APT8035JN substitution

   - MOSFET ⓘ Cross-Reference Search

 

APT8035JN Datasheet (PDF)

 ..1. Size:69K  apt
 apt8035jn.pdf pdf_icon

APT8035JN

DGAPT8030JN 800V 27.0A 0.30SAPT8035JN 800V 25.0A 0.35ISOTOP"UL Recognized" File No. E145592 (S)POWER MOS IVSINGLE DIE ISOTOP PACKAGEN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.APT APTSymbol Parameter 8030JN 8035JN UNITVDSS Drain-Source Voltage800 800 VoltsID Continuous Drain Cu

 8.1. Size:62K  apt
 apt8030lvfr.pdf pdf_icon

APT8035JN

APT8030LVFR800V 27A 0.300POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Tes

 8.2. Size:60K  apt
 apt8030lvr.pdf pdf_icon

APT8035JN

APT8030LVR800V 27A 0.300POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower

 8.3. Size:61K  apt
 apt8030jn.pdf pdf_icon

APT8035JN

DGAPT8030JN 800V 27.0A 0.30SAPT8035JN 800V 25.0A 0.35ISOTOP"UL Recognized" File No. E145592 (S)POWER MOS IVSINGLE DIE ISOTOP PACKAGEN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.APT APTSymbol Parameter 8030JN 8035JN UNITVDSS Drain-Source Voltage800 800 VoltsID Continuous Drain Cu

SHOW MORE

Datasheet: APT8020LFLLG , APT8020LLLG , APT8024B2FLLG , APT8024B2LLG , APT8024B2VFRG , APT8024LFLLG , APT8024LLLG , APT8024LVFRG , IRF630 , APT8043BFLLG , APT8043SFLLG , APT8043SLL , APT8052BFLLG , APT8052BLLG , APT8052SFLLG , APT8075AN , APT8075BVFRG .

History: BF981

Keywords - APT8035JN MOSFET datasheet

 APT8035JN cross reference
 APT8035JN equivalent finder
 APT8035JN lookup
 APT8035JN substitution
 APT8035JN replacement

 

 
Back to Top

 


 
.