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APT8035JN PDF Specs and Replacement


   Type Designator: APT8035JN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 520 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 725 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
   Package: SOT-227
 

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APT8035JN PDF Specs

 ..1. Size:69K  apt
apt8035jn.pdf pdf_icon

APT8035JN

D G APT8030JN 800V 27.0A 0.30 S APT8035JN 800V 25.0A 0.35 ISOTOP "UL Recognized" File No. E145592 (S) POWER MOS IV SINGLE DIE ISOTOP PACKAGE N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. APT APT Symbol Parameter 8030JN 8035JN UNIT VDSS Drain-Source Voltage 800 800 Volts ID Continuous Drain Cu... See More ⇒

 8.1. Size:62K  apt
apt8030lvfr.pdf pdf_icon

APT8035JN

APT8030LVFR 800V 27A 0.300 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Tes... See More ⇒

 8.2. Size:60K  apt
apt8030lvr.pdf pdf_icon

APT8035JN

APT8030LVR 800V 27A 0.300 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower ... See More ⇒

 8.3. Size:61K  apt
apt8030jn.pdf pdf_icon

APT8035JN

D G APT8030JN 800V 27.0A 0.30 S APT8035JN 800V 25.0A 0.35 ISOTOP "UL Recognized" File No. E145592 (S) POWER MOS IV SINGLE DIE ISOTOP PACKAGE N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. APT APT Symbol Parameter 8030JN 8035JN UNIT VDSS Drain-Source Voltage 800 800 Volts ID Continuous Drain Cu... See More ⇒

Detailed specifications: APT8020LFLLG , APT8020LLLG , APT8024B2FLLG , APT8024B2LLG , APT8024B2VFRG , APT8024LFLLG , APT8024LLLG , APT8024LVFRG , 8205A , APT8043BFLLG , APT8043SFLLG , APT8043SLL , APT8052BFLLG , APT8052BLLG , APT8052SFLLG , APT8075AN , APT8075BVFRG .

Keywords - APT8035JN MOSFET specs

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