2N5670 Specs and Replacement
Type Designator: 2N5670
Type of Transistor: JFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 0.31 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 0.008 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 500 Ohm
Package: TO92
- MOSFET ⓘ Cross-Reference Search
2N5670 datasheet
9.1. Size:123K central
2n5679 2n5680 2n5681 2n5682.pdf 
DATA SHEET 2N5679 2N5680 PNP 2N5681 2N5682 NPN COMPLEMENTARY SILICON HIGH POWER TRANSISTORS JEDEC TO-39 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5679 Series types are complementary silicon high power transistors manufactured by the epitaxial planar process and designed for general-purpose amplifier and switching applications where high voltages are required. MAXIMUM RATIN... See More ⇒
9.2. Size:317K comset
2n5671-2n5672.pdf 
NPN 2N5671 2N5672 HIGH CURRENT FAST SWITCHING APPLICATIONS HIGH CURRENT FAST SWITCHING APPLICATIONS The 2N5671 and 2N5672 are silicon multiepitaxial planer NPN transistors in Jedec TO-3. They are especially intended for high current, fast switching industrial applications. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit 2N5671 90 VCEO Collector-Emitter Voltage V 2N5672 120 2N56... See More ⇒
9.4. Size:11K semelab
2n5675.pdf 
2N5675 Dimensions in mm (inches). Bipolar PNP Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 100V dia. IC = 2A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3... See More ⇒
9.5. Size:43K bocasemi
2n5679 2n5680 2n5681 2n5682.pdf 
IS/ISO 9002 IS / IECQC 700000 Lic# QSC/L- 000019.2 IS / IECQC 750100 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS 2N5679 2N5681 2N5680 2N5682 PNP NPN TO-39 TO-39 Boca Semiconductor Corp. BSC These Are High Voltage & High Current, General Purpose Transistors ABSOLUTE MAXIMUM RATINGS. DESCRIPTION SYMBOL 2N5... See More ⇒
9.6. Size:187K cdil
2n5679 2n5680 81 82.pdf 
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS 2N5679 2N5681 2N5680 2N5682 PNP NPN TO-39 TO-39 These Are High Voltage & High Current, General Purpose Transistors ABSOLUTE MAXIMUM RATINGS. DESCRIPTION SYMBOL 2N5679 2N5680 UNITS 2N5681 2N5682 Collector -Emitter Voltage VCEO 100 120 V Collector -Base ... See More ⇒
9.7. Size:164K aeroflex
2n5679 2n5680.pdf 
PNP Power Silicon Transistor 2N5679 & 2N5680 Features Available in JAN, JANTX and JANTXV per MIL-PRF-19500/582 TO-39 (TO-205AD) Package Maximum Ratings (TA = 25 C unless otherwise noted) Ratings Symbol 2N5679 2N5680 Units Collector - Emitter Voltage VCEO 100 120 Vdc Collector - Base Voltage VCBO 100 120 Vdc Emitter - Base Voltage VEBO 4.0 4.0 Vdc Collector Current IC 1.0 1.0... See More ⇒
9.8. Size:165K cn sptech
2n5672.pdf 
SPTECH Product Specification SPTECH Silicon NPN Power Transistors 2N5672 DESCRIPTION DC Current Gain- h = 20 100@I = 15A FE C Low Collector Saturation Voltage- V )= 0.75V(Max)@ I = 15A CE(sat C Wide Area of Safe Operation APPLICATIONS Designed for general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN... See More ⇒
9.9. Size:119K inchange semiconductor
2n5671 2n5672.pdf 
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5671 2N5672 DESCRIPTION With TO-3 package High current ,high speed APPLICATIONS Intended for high current and fast switching industrial applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PA... See More ⇒
9.10. Size:123K inchange semiconductor
2n5676.pdf 
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5676 DESCRIPTION With TO-66 package High transition frequency APPLICATIONS For use as high-frequency drivers in audio amplifiers PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS V... See More ⇒
Detailed specifications: APTM120DA30CT1G, APTM120U10SCAVG, APTM50AM24SCG, APTM50AM38SCTG, APTM50DAM38CTG, APTM50HM75SCTG, ATP304, ATP401, IRF730, 2SK2255-01MR, 7N10L-AA3, 7N10G-AA3, 7N10L-TN3, 7N10G-TN3, AO4466L, AOD4144, CS60N06C4
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.