RFD16N05LSM Specs and Replacement

Type Designator: RFD16N05LSM

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.047 Ohm

Package: TO252AA

RFD16N05LSM substitution

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RFD16N05LSM datasheet

 ..1. Size:691K  onsemi
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RFD16N05LSM

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 0.1. Size:806K  cn vbsemi
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RFD16N05LSM

RFD16N05LSM9A www.VBsemi.tw N-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Available 175 C Junction Temperature 0.025 at VGS = 10 V 35 RoHS* 60 0.030 at VGS = 4.5 V 30 COMPLIANT TO-252 D G Drain Connected to Tab G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwi... See More ⇒

 5.1. Size:161K  fairchild semi
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RFD16N05LSM

RFD16N05L, RFD16N05LSM Data Sheet December 2003 16A, 50V, 0.047 Ohm, Logic Level, Features N-Channel Power MOSFETs 16A, 50V These are N-Channel logic level power MOSFETs rDS(ON) = 0.047 manufactured using the MegaFET process. This process, UIS SOA Rating Curve (Single Pulse) which uses feature sizes approaching those of LSI integrated circuits gives optimum utilizati... See More ⇒

 6.1. Size:228K  fairchild semi
rfd16n05-sm.pdf pdf_icon

RFD16N05LSM

RFD16N05, RFD16N05SM Data Sheet November 2003 16A, 50V, 0.047 Ohm, N-Channel Power Features MOSFETs 16A, 50V The RFD16N05 and RFD16N05SM N-channel power rDS(ON) = 0.047 MOSFETs are manufactured using the MegaFET process. Temperature Compensating PSPICE Model This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilizati... See More ⇒

Detailed specifications: RFD15N06LESM, RFD15P05, RFD15P06, RFD15P06SM, RFD16N03L, RFD16N03LSM, RFD16N05, RFD16N05L, IRF3205, RFD16N05SM, RFD16N06LE, RFD16N06LESM, RFD3055, RFD3055LE, RFD3055LESM, RFD3055SM, RFD3N08L

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