RCD040N25TL MOSFET. Datasheet pdf. Equivalent
Type Designator: RCD040N25TL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5.5 V
|Id|ⓘ - Maximum Drain Current: 4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 9 nC
trⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 30 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: SC-63
RCD040N25TL Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RCD040N25TL Datasheet (PDF)
rcd040n25tl.pdf
Data Sheet10V Drive Nch MOSFET RCD040N25 Structure Dimensions (Unit : mm)Silicon N-channel MOSFETCPT36.5(SC-63)5.12.30.5Features1) Low on-resistance.2) High-speed switching.0.753) Wide range of SOA.0.650.9 2.3(1) (2) (3)4) Drive circuits can be simple. 2.3 0.51.05) Parallel use is easy. ApplicationSwitching Packaging spe
rcd040n25.pdf
Data Sheet10V Drive Nch MOSFET RCD040N25 Structure Dimensions (Unit : mm)Silicon N-channel MOSFETCPT36.5(SC-63)5.12.30.5Features1) Low on-resistance.2) High-speed switching.0.753) Wide range of SOA.0.650.9 2.3(1) (2) (3)4) Drive circuits can be simple. 2.3 0.51.05) Parallel use is easy. ApplicationSwitching Packaging spe
rcd041n25.pdf
RCD041N25 Nch 250V 4.0A Power MOSFET Data SheetlOutlineVDSS250VCPT3(SC-63)RDS(on) (Max.)1300mW(3) ID4.0A(2) (1) PD20WlFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain 3) Drive circuits can be simple.(3) Source 4) Parallel use is easy.*1 BODY DIODE 5) Pb-free lead plating ; RoHS compliant6) 100%
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: RCX511N25 | SM6A08NSU | AOB10N60 | RUH120N140S | AOB1608L
History: RCX511N25 | SM6A08NSU | AOB10N60 | RUH120N140S | AOB1608L
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