All MOSFET. RFD16N05SM Datasheet

 

RFD16N05SM MOSFET. Datasheet pdf. Equivalent


   Type Designator: RFD16N05SM
   Marking Code: D16N05
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 72 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 16 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 80 nC
   trⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 325 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.047 Ohm
   Package: TO252AA

 RFD16N05SM Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RFD16N05SM Datasheet (PDF)

 6.1. Size:161K  fairchild semi
 rfd16n05l-lsm.pdf

RFD16N05SM RFD16N05SM

RFD16N05L, RFD16N05LSMData Sheet December 200316A, 50V, 0.047 Ohm, Logic Level, FeaturesN-Channel Power MOSFETs 16A, 50VThese are N-Channel logic level power MOSFETs rDS(ON) = 0.047manufactured using the MegaFET process. This process, UIS SOA Rating Curve (Single Pulse)which uses feature sizes approaching those of LSI integrated circuits gives optimum utilizati

 6.2. Size:228K  fairchild semi
 rfd16n05-sm.pdf

RFD16N05SM RFD16N05SM

RFD16N05, RFD16N05SMData Sheet November 200316A, 50V, 0.047 Ohm, N-Channel Power FeaturesMOSFETs 16A, 50VThe RFD16N05 and RFD16N05SM N-channel power rDS(ON) = 0.047MOSFETs are manufactured using the MegaFET process. Temperature Compensating PSPICE ModelThis process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilizati

 6.3. Size:691K  onsemi
 rfd16n05lsm.pdf

RFD16N05SM RFD16N05SM

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 6.4. Size:806K  cn vbsemi
 rfd16n05lsm9a.pdf

RFD16N05SM RFD16N05SM

RFD16N05LSM9Awww.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwi

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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