RDD022N50 MOSFET Datasheet: N-Ch, 500V, 2A. Full specification with pinout and replacement list

RDD022N50 Specs and Replacement

Type Designator: RDD022N50

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 27 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 5.4 Ohm

Package: SC-63

RDD022N50 substitution

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RDD022N50 datasheet

..1. Size:604K rohm
rdd022n50.pdf pdf_icon

RDD022N50 Nch 500V 2A Power MOSFET Datasheet lOutline VDSS 500V CPT3 (SC-63) RDS(on) (Max.) 5.4W (SOT-428) ID 2A (1) (2) (3) PD 20W lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V. 4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy. ... See More ⇒

7.1. Size:754K rohm
rdd022n60.pdf pdf_icon

RDD022N60 Nch 600V 2A Power MOSFET Datasheet lOutline VDSS 600V CPT3 (SC-63) RDS(on) (Max.) 6.7W (SOT-428) ID 2A (1) (2) (3) PD 20W lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V. 4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy. ... See More ⇒

9.1. Size:534K rohm
rdd020n60.pdf pdf_icon

Data Sheet 10V Drive Nch MOSFET RDD020N60 Structure Dimensions (Unit mm) Silicon N-channel MOSFET CPT3 6.5 (SC-63) 5.1 2.3 0.5 Features 1) Low on-resistance. 2) High-speed switching. 0.75 3) Wide range of SOA. 0.65 (1) Gate 0.9 2.3 (1) (2) (3) 4) Drive circuits can be simple. (2) Drain 2.3 0.5 1.0 (3) Source 5) Parallel use is easy. Applicati... See More ⇒

9.2. Size:606K rohm
rdd023n50.pdf pdf_icon

RDD023N50 Nch 500V 2A Power MOSFET Datasheet lOutline VDSS 500V CPT3 (SC-63) RDS(on) (Max.) 5.4W (SOT-428) ID 2A (1) (2) (3) PD 20W lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V. 4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy. ... See More ⇒

Detailed specifications: RCX100N25, RCX200N20, RCX220N25, RCX300N20, RCX510N25, RCX511N25, RCX700N20, RDD020N60, 12N60, RDD022N60, RDD023N50, RDD050N20, RDN050N20, RDN100N20, RDN120N25, RDN150N20, RDR005N25