All MOSFET. RDD022N60 Datasheet

 

RDD022N60 Datasheet and Replacement


   Type Designator: RDD022N60
   Marking Code: 022N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.7 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 7 nC
   trⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 25 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 6.7 Ohm
   Package: SC-63
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RDD022N60 Datasheet (PDF)

 ..1. Size:754K  rohm
 rdd022n60.pdf pdf_icon

RDD022N60

RDD022N60 Nch 600V 2A Power MOSFET DatasheetlOutlineVDSS600V CPT3(SC-63)RDS(on) (Max.)6.7W(SOT-428)ID2A(1) (2) (3) PD20WlFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V.4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.

 7.1. Size:604K  rohm
 rdd022n50.pdf pdf_icon

RDD022N60

RDD022N50 Nch 500V 2A Power MOSFET DatasheetlOutlineVDSS500V CPT3(SC-63)RDS(on) (Max.)5.4W(SOT-428)ID2A(1) (2) (3) PD20WlFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V.4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.

 9.1. Size:534K  rohm
 rdd020n60.pdf pdf_icon

RDD022N60

Data Sheet10V Drive Nch MOSFET RDD020N60 Structure Dimensions (Unit : mm)Silicon N-channel MOSFETCPT36.5(SC-63)5.12.30.5Features1) Low on-resistance.2) High-speed switching.0.753) Wide range of SOA.0.65(1) Gate0.9 2.3(1) (2) (3)4) Drive circuits can be simple. (2) Drain 2.3 0.51.0(3) Source5) Parallel use is easy. Applicati

 9.2. Size:606K  rohm
 rdd023n50.pdf pdf_icon

RDD022N60

RDD023N50 Nch 500V 2A Power MOSFET DatasheetlOutlineVDSS500V CPT3(SC-63)RDS(on) (Max.)5.4W(SOT-428)ID2A(1) (2) (3) PD20WlFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V.4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.

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Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

Keywords - RDD022N60 MOSFET datasheet

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