RDN150N20 PDF and Equivalents Search

 

RDN150N20 Specs and Replacement

Type Designator: RDN150N20

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 37 nS

Cossⓘ - Output Capacitance: 443 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm

Package: TO-220FN

RDN150N20 substitution

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RDN150N20 datasheet

 ..1. Size:82K  rohm
 rdn150n20.pdf pdf_icon

RDN150N20

RDN150N20 Transistors 10V Drive Nch MOS FET RDN150N20 External dimensions (Unit mm) Structure Silicon N-channel TO-220FN 10.0 4.5 3.2 2.8 MOS FET Features 1) Low on-resistance. 1.2 1.3 2) Low input capacitance. 3) Exellent resistance to damage from static electricity. 0.8 (1)Gate 2.54 2.54 0.75 2.6 (2)Drain (1) (2) (3) (3)Source Application Switching... See More ⇒

Detailed specifications: RDD020N60, RDD022N50, RDD022N60, RDD023N50, RDD050N20, RDN050N20, RDN100N20, RDN120N25, NCEP15T14, RDR005N25, R5005CNX, R5007FNX, R5009FNJ, R5011FNJ, R5016FNJ, R5021ANJ, R520

Keywords - RDN150N20 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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