All MOSFET. RDN150N20 Datasheet

 

RDN150N20 Datasheet and Replacement


   Type Designator: RDN150N20
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 15 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 32 nC
   trⓘ - Rise Time: 37 nS
   Cossⓘ - Output Capacitance: 443 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
   Package: TO-220FN
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RDN150N20 Datasheet (PDF)

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RDN150N20

RDN150N20 Transistors 10V Drive Nch MOS FET RDN150N20 External dimensions (Unit : mm) Structure Silicon N-channel TO-220FN10.0 4.53.2 2.8MOS FET Features 1) Low on-resistance. 1.21.32) Low input capacitance. 3) Exellent resistance to damage from static electricity. 0.8(1)Gate2.54 2.54 0.75 2.6(2)Drain(1) (2) (3)(3)Source Application Switching

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History: TK15J60T

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