RDN150N20 Datasheet and Replacement
Type Designator: RDN150N20
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 37 nS
Cossⓘ - Output Capacitance: 443 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
Package: TO-220FN
RDN150N20 substitution
RDN150N20 Datasheet (PDF)
rdn150n20.pdf

RDN150N20 Transistors 10V Drive Nch MOS FET RDN150N20 External dimensions (Unit : mm) Structure Silicon N-channel TO-220FN10.0 4.53.2 2.8MOS FET Features 1) Low on-resistance. 1.21.32) Low input capacitance. 3) Exellent resistance to damage from static electricity. 0.8(1)Gate2.54 2.54 0.75 2.6(2)Drain(1) (2) (3)(3)Source Application Switching
Datasheet: RDD020N60 , RDD022N50 , RDD022N60 , RDD023N50 , RDD050N20 , RDN050N20 , RDN100N20 , RDN120N25 , IRFP450 , RDR005N25 , R5005CNX , R5007FNX , R5009FNJ , R5011FNJ , R5016FNJ , R5021ANJ , R520 .
History: HSCA2030
Keywords - RDN150N20 MOSFET datasheet
RDN150N20 cross reference
RDN150N20 equivalent finder
RDN150N20 lookup
RDN150N20 substitution
RDN150N20 replacement
History: HSCA2030



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