R6007ENX MOSFET. Datasheet pdf. Equivalent
Type Designator: R6007ENX
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 20 nC
trⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 390 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.62 Ohm
Package: TO-220FM
R6007ENX Transistor Equivalent Substitute - MOSFET Cross-Reference Search
R6007ENX Datasheet (PDF)
r6007enx.pdf
R6007ENX Nch 600V 7A Power MOSFET Data SheetlOutlineVDSS600V TO-220FMRDS(on) (Max.)0.620WID7A(3) PD40W(1) (2) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V.4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.6) Pb-free lead
r6007enx.pdf
isc N-Channel MOSFET Transistor R6007ENXFEATURESDrain Current I = 7A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 620m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
r6007enj.pdf
R6007ENJ Nch 600V 7A Power MOSFET Data SheetlOutline(2) VDSS600VLPT(S)(SC-83)RDS(on) (Max.)0.620WID7A(1) PD40W(3) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V.4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.6) Pb-fr
r6007enj.pdf
isc N-Channel MOSFET Transistor R6007ENJFEATURESDrain Current I = 7A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 620m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
r6007jnj.pdf
R6007JNJDatasheetNch 600V 7A Power MOSFETlOutlinel LPT(S)VDSS600VRDS(on)(Max.)0.780ID7APD96W lFeaturesllInner circuitl1) Fast reverse recovery time (trr)2) Low on-resistance3) Fast switching speed4) Drive circuits can be simple5) Pb-free plating ; RoHS compliantlApplicationllPack
r6007jnd3.pdf
R6007JND3DatasheetNch 600V 7A Power MOSFETlOutlinel TO-252VDSS600VRDS(on)(Max.)0.780ID7APD96W lFeaturesllInner circuitl1) Fast reverse recovery time (trr)2) Low on-resistance3) Fast switching speed4) Drive circuits can be simple5) Pb-free plating ; RoHS compliantlApplicationllPac
r6007jnx.pdf
R6007JNXDatasheetNch 600V 7A Power MOSFETlOutlinel TO-220FMVDSS600VRDS(on)(Max.)0.780ID7APD46W lFeaturesllInner circuitl1) Fast reverse recovery time (trr)2) Low on-resistance3) Fast switching speed4) Drive circuits can be simple5) Pb-free plating ; RoHS compliantlApplicationllPa
r6007mnj.pdf
R6007MNJDatasheetNch 600V 7A Power MOSFETlOutlinel TO-263SVDSS 600V SC-83RDS(on)(Max.) 0.730 LPT(S)ID 7APD 94W lInner circuitllFeaturesl1) Fast reverse recovery time (trr).2) Low on-resistance.3) Fast switching speed.4) Gate-source voltage (VGSS) guaranteed tobe 30V.5) Drive circuits can be simple.
r6007knx.pdf
R6007KNXDatasheetNch 600V 7A Power MOSFETlOutlinelVDSS 600VRDS(on)(Max.)0.62 TO-220FMID7APD 46W lInner circuitllFeaturesl1) Low on-resistance.2) Ultra fast switching speed.3) Parallel use is easy.4) Pb-free lead plating ; RoHS compliantlPackaging specificationsl Packing Bulk Reel size (mm) -lAppl
r6007knj.pdf
R6007KNJDatasheetNch 600V 7A Power MOSFETlOutlinel TO-263SVDSS600V SC-83RDS(on)(Max.)0.62 LPT(S)ID7APD78W lInner circuitllFeaturesl1) Low on-resistance.2) Ultra fast switching speed.3) Parallel use is easy.4) Pb-free lead plating ; RoHS compliantlPackaging specificationslEmbossed PackingT
r6007mnj.pdf
isc N-Channel MOSFET Transistor R6007MNJFEATURESDrain Current I = 7A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 730m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
r6007jnj.pdf
isc N-Channel MOSFET Transistor R6007JNJFEATURESDrain Current I =7A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 780m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
r6007knx.pdf
isc N-Channel MOSFET Transistor R6007KNXFEATURESDrain Current I = 7A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 620m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
r6007jnd3.pdf
isc N-Channel MOSFET Transistor R6007JND3FEATURESDrain Current I =7A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 780m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
r6007knj.pdf
isc N-Channel MOSFET Transistor R6007KNJFEATURESDrain Current I = 7A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 620m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
r6007jnx.pdf
isc N-Channel MOSFET Transistor R6007JNXFEATURESDrain Current I =7A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 780m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
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