R6020ENZ MOSFET: N-Ch, 600V, 20A. Full datasheet with pinout, specifications and replacement transistor list

..1. Size:896K rohm
r6020enz.pdf pdf_icon

R6020ENZ Nch 600V 20A Power MOSFET Data SheetlOutlineVDSS600V TO-3PFRDS(on) (Max.)0.196WID20A(1) (2) PD120W(3) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V.4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.6) Pb-free lead

..2. Size:265K inchange semiconductor
r6020enz.pdf pdf_icon

isc N-Channel MOSFET Transistor R6020ENZFEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 196m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

0.1. Size:861K rohm
r6020enz1.pdf pdf_icon

R6020ENZ1 Nch 600V 20A Power MOSFET Data SheetlOutlineVDSS600V TO-247RDS(on) (Max.)0.196WID20A(3) PD120W(1) (2) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V.4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.6) Pb-free lea

0.2. Size:377K inchange semiconductor
r6020enz1.pdf pdf_icon

isc N-Channel MOSFET Transistor R6020ENZ1FEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 196m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

7.1. Size:1588K rohm
r6020enx.pdf pdf_icon

R6020ENX Nch 600V 20A Power MOSFET Data SheetlOutlineVDSS600VTO-220FMRDS(on) (Max.)0.20WID20A(3) PD50W(1) (2) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain 3) Gate-source voltage (VGSS) guaranteed to be 20V. (3) Source 4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.6) Pb-free lead p

7.2. Size:853K rohm
r6020enj.pdf pdf_icon

R6020ENJ Nch 600V 20A Power MOSFET Data SheetlOutline(2) VDSS600VLPT(S)(SC-83)RDS(on) (Max.)0.196WID20A(1) PD40W(3) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V.4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.6) Pb-

7.3. Size:251K inchange semiconductor
r6020enx.pdf pdf_icon

isc N-Channel MOSFET Transistor R6020ENXFEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 196m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

7.4. Size:254K inchange semiconductor
r6020enj.pdf pdf_icon

isc N-Channel MOSFET Transistor R6020ENJFEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 196m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

R6020ENZ Datasheet (PDF)

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