R6024ENX MOSFET. Datasheet pdf. Equivalent
Type Designator: R6024ENX
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 24 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 70 nC
trⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 1350 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.165 Ohm
Package: TO-220FM
R6024ENX Transistor Equivalent Substitute - MOSFET Cross-Reference Search
R6024ENX Datasheet (PDF)
r6024enx.pdf
R6024ENX Nch 600V 24A Power MOSFET Data SheetlOutlineVDSS600V TO-220FMRDS(on) (Max.)0.165WID24A(3) PD40W(1) (2) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V.4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.6) Pb-free lea
r6024enx.pdf
isc N-Channel MOSFET Transistor R6024ENXFEATURESDrain Current I = 24A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 165m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
r6024enz1.pdf
R6024ENZ1 Nch 600V 24A Power MOSFET Data SheetlOutlineVDSS600V TO-247RDS(on) (Max.)0.165WID24A(3) PD120W(1) (2) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V.4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.6) Pb-free lea
r6024enz.pdf
R6024ENZ Nch 600V 24A Power MOSFET Data SheetlOutlineVDSS600V TO-3PFRDS(on) (Max.)0.165WID24A(1) (2) PD120W(3) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V.4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.6) Pb-free lead
r6024enj.pdf
R6024ENJ Nch 600V 24A Power MOSFET Data SheetlOutline(2) VDSS600VLPT(S)(SC-83)RDS(on) (Max.)0.165WID24A(1) PD40W(3) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V.4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.6) Pb-
r6024enz1.pdf
isc N-Channel MOSFET Transistor R6024ENZ1FEATURESDrain Current I = 24A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 165m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
r6024enz.pdf
isc N-Channel MOSFET Transistor R6024ENZFEATURESDrain Current I = 24A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 165m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
r6024enj.pdf
isc N-Channel MOSFET Transistor R6024ENJFEATURESDrain Current I = 24A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 165m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
