R6024ENZ MOSFET: N-Ch, 600V, 24A. Full datasheet with pinout, specifications and replacement transistor list

..1. Size:882K rohm
r6024enz.pdf pdf_icon

R6024ENZ Nch 600V 24A Power MOSFET Data SheetlOutlineVDSS600V TO-3PFRDS(on) (Max.)0.165WID24A(1) (2) PD120W(3) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V.4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.6) Pb-free lead

..2. Size:265K inchange semiconductor
r6024enz.pdf pdf_icon

isc N-Channel MOSFET Transistor R6024ENZFEATURESDrain Current I = 24A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 165m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

0.1. Size:865K rohm
r6024enz1.pdf pdf_icon

R6024ENZ1 Nch 600V 24A Power MOSFET Data SheetlOutlineVDSS600V TO-247RDS(on) (Max.)0.165WID24A(3) PD120W(1) (2) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V.4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.6) Pb-free lea

0.2. Size:377K inchange semiconductor
r6024enz1.pdf pdf_icon

isc N-Channel MOSFET Transistor R6024ENZ1FEATURESDrain Current I = 24A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 165m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

7.1. Size:819K rohm
r6024enx.pdf pdf_icon

R6024ENX Nch 600V 24A Power MOSFET Data SheetlOutlineVDSS600V TO-220FMRDS(on) (Max.)0.165WID24A(3) PD40W(1) (2) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V.4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.6) Pb-free lea

7.2. Size:842K rohm
r6024enj.pdf pdf_icon

R6024ENJ Nch 600V 24A Power MOSFET Data SheetlOutline(2) VDSS600VLPT(S)(SC-83)RDS(on) (Max.)0.165WID24A(1) PD40W(3) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V.4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.6) Pb-

7.3. Size:251K inchange semiconductor
r6024enx.pdf pdf_icon

isc N-Channel MOSFET Transistor R6024ENXFEATURESDrain Current I = 24A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 165m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

7.4. Size:254K inchange semiconductor
r6024enj.pdf pdf_icon

isc N-Channel MOSFET Transistor R6024ENJFEATURESDrain Current I = 24A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 165m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

R6024ENZ Datasheet (PDF)

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