R6035ENZ PDF and Equivalents Search

 

R6035ENZ Specs and Replacement

Type Designator: R6035ENZ

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 120 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 35 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 80 nS

Cossⓘ - Output Capacitance: 2000 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.102 Ohm

Package: TO-3PF

R6035ENZ substitution

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R6035ENZ datasheet

 ..1. Size:929K  rohm
r6035enz.pdf pdf_icon

R6035ENZ

R6035ENZ Nch 600V 35A Power MOSFET Data Sheet lOutline VDSS 600V TO-3PF RDS(on) (Max.) 0.102W ID 35A (1) (2) PD 120W (3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V. 4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy. 6) Pb-free lead... See More ⇒

 ..2. Size:265K  inchange semiconductor
r6035enz.pdf pdf_icon

R6035ENZ

isc N-Channel MOSFET Transistor R6035ENZ FEATURES Drain Current I = 35A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Static Drain-Source On-Resistance R = 102m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp... See More ⇒

 0.1. Size:918K  rohm
r6035enz1.pdf pdf_icon

R6035ENZ

R6035ENZ1 Nch 600V 35A Power MOSFET Data Sheet lOutline VDSS 600V TO-247 RDS(on) (Max.) 0.102W ID 35A (3) PD 120W (1) (2) lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V. 4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy. 6) Pb-free lea... See More ⇒

 0.2. Size:304K  inchange semiconductor
r6035enz1.pdf pdf_icon

R6035ENZ

isc N-Channel MOSFET Transistor R6035ENZ1 FEATURES Drain Current I = 35A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Static Drain-Source On-Resistance R = 102m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur... See More ⇒

Detailed specifications: R6024ENX, R6024ENZ, R6024ENZ1, R6025FNZ, R6025FNZ1, R6030ENX, R6030ENZ, R6030ENZ1, EMB04N03H, R6035ENZ1, R6046ANZ1, R6046FNZ1, R6046FNZC8, R6047ENZ1, R6076ENZ1, R8005ANX, R8010ANX

Keywords - R6035ENZ MOSFET specs

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