RE1J002YN PDF and Equivalents Search

 

RE1J002YN Specs and Replacement

Type Designator: RE1J002YN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.15 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 6 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm

Package: EMT3F

RE1J002YN substitution

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RE1J002YN datasheet

 ..1. Size:568K  rohm
 re1j002yn.pdf pdf_icon

RE1J002YN

RE1J002YN Nch 50V 200mA Small Signal MOSFET Datasheet lOutline VDSS 50V (3) EMT3F RDS(on) (Max.) 2.2W (1) ID 200mA (2) PD 150mW lFeatures lInner circuit 1) Low voltage drive(0.9V) makes this (1) Gate device ideal for partable equipment. (2) Source 2) Drive circuits can be simple. (3) Drain 3) Built-in G-S Protection Diode. *1 BODY DIODE *2 ESD PROTECTION DIODE ... See More ⇒

Detailed specifications: RDX080N50FU6, RDX100N60FU6, RDX120N50FU6, RE1C001UN, RE1C001ZP, RE1C002UN, RE1C002ZP, RE1E002SP, 7N65, RE1L002SN, RF1S25N06, RF1S30N06LE, RF1S30P06, RF1S40N10, RF1S540, RF1S60P03, RF1S640

Keywords - RE1J002YN MOSFET specs

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