All MOSFET. RF1S40N10 Datasheet

 

RF1S40N10 MOSFET. Datasheet pdf. Equivalent


   Type Designator: RF1S40N10
   Marking Code: F1S40N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 160 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 40 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 300 nC
   trⓘ - Rise Time: 30 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: TO-262AA

 RF1S40N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RF1S40N10 Datasheet (PDF)

 ..1. Size:368K  fairchild semi
 rf1s40n10.pdf

RF1S40N10 RF1S40N10

RFG40N10, RFP40N10, RF1S40N10,RF1S40N10SMData Sheet January 200240A, 100V, 0.040 Ohm, N-Channel Power FeaturesMOSFETs 40A, 100VThese are N-Channel power MOSFETs manufactured using rDS(ON) = 0.040the MegaFET process. This process, which uses feature UIS Rating Curvesizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulti

 0.1. Size:369K  fairchild semi
 rfg40n10 rfp40n10 rf1s40n10-sm.pdf

RF1S40N10 RF1S40N10

RFG40N10, RFP40N10, RF1S40N10,RF1S40N10SMData Sheet January 200240A, 100V, 0.040 Ohm, N-Channel Power FeaturesMOSFETs 40A, 100VThese are N-Channel power MOSFETs manufactured using rDS(ON) = 0.040the MegaFET process. This process, which uses feature UIS Rating Curvesizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulti

 0.2. Size:410K  intersil
 rfg40n10le rfp40n10le rf1s40n10lesm.pdf

RF1S40N10 RF1S40N10

RFG40N10LE, RFP40N10LE, RF1S40N10LESMData Sheet October 1999 File Number 4061.540A, 100V, 0.040 Ohm, Logic Level FeaturesN-Channel Power MOSFETs 40A, 100VThese N-Channel enhancement mode power MOSFETs are rDS(ON) = 0.040manufactured using the latest manufacturing process Temperature Compensating PSPICE Modeltechnology. This process, which uses feature sizesappr

 9.1. Size:415K  1
 rfg45n06le rfp45n06le rf1s45n06le rf1s45n06lesm.pdf

RF1S40N10 RF1S40N10

 9.2. Size:372K  fairchild semi
 rfg45n06 rfp45n06 rf1s45n06sm.pdf

RF1S40N10 RF1S40N10

RFG45N06, RFP45N06, RF1S45N06SMData Sheet January 200245A, 60V, 0.028 Ohm, N-Channel Power FeaturesMOSFETs 45A, 60VThese are N-Channel enhancement mode silicon gate rDS(ON) = 0.028power field effect transistors. They are advanced power Temperature Compensating PSPICE ModelMOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the

 9.3. Size:93K  fairchild semi
 rfp4n100 rf1s4n100sm.pdf

RF1S40N10 RF1S40N10

RFP4N100, RF1S4N100SMData Sheet January 20024.3A, 1000V, 3.500 Ohm, High Voltage, FeaturesN-Channel Power MOSFETs 4.3A, 1000VThe RFP4N100 and RFP4N100SM are N-Channel rDS(ON) = 3.500enhancement mode silicon gate power field effect UIS Rating Curve (Single Pulse)transistors. They are designed for use in applications such as switching regulators, switching conver

 9.4. Size:202K  intersil
 rfp45n06le rf1s45n06lesm.pdf

RF1S40N10 RF1S40N10

RFP45N06LE, RF1S45N06LESMData Sheet October 1999 File Number 4076.245A, 60V, 0.028 Ohm, Logic Level FeaturesN-Channel Power MOSFETs 45A, 60VThese are N-Channel enhancement mode power MOSFETs rDS(ON) = 0.028manufactured using the latest manufacturing process Temperature Compensating PSPICE Modeltechnology. This process, which uses feature sizesapproaching those

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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