RF1S40N10 Specs and Replacement
Type Designator: RF1S40N10
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 160 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 30 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
Package: TO-262AA
RF1S40N10 substitution
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RF1S40N10 datasheet
rf1s40n10.pdf
RFG40N10, RFP40N10, RF1S40N10, RF1S40N10SM Data Sheet January 2002 40A, 100V, 0.040 Ohm, N-Channel Power Features MOSFETs 40A, 100V These are N-Channel power MOSFETs manufactured using rDS(ON) = 0.040 the MegaFET process. This process, which uses feature UIS Rating Curve sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulti... See More ⇒
rfg40n10 rfp40n10 rf1s40n10-sm.pdf
RFG40N10, RFP40N10, RF1S40N10, RF1S40N10SM Data Sheet January 2002 40A, 100V, 0.040 Ohm, N-Channel Power Features MOSFETs 40A, 100V These are N-Channel power MOSFETs manufactured using rDS(ON) = 0.040 the MegaFET process. This process, which uses feature UIS Rating Curve sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulti... See More ⇒
rfg40n10le rfp40n10le rf1s40n10lesm.pdf
RFG40N10LE, RFP40N10LE, RF1S40N10LESM Data Sheet October 1999 File Number 4061.5 40A, 100V, 0.040 Ohm, Logic Level Features N-Channel Power MOSFETs 40A, 100V These N-Channel enhancement mode power MOSFETs are rDS(ON) = 0.040 manufactured using the latest manufacturing process Temperature Compensating PSPICE Model technology. This process, which uses feature sizes appr... See More ⇒
Detailed specifications: RE1C002UN, RE1C002ZP, RE1E002SP, RE1J002YN, RE1L002SN, RF1S25N06, RF1S30N06LE, RF1S30P06, 2SK3878, RF1S540, RF1S60P03, RF1S640, RF1S70N06, RF1S9540, RF4C050AP, RF4C100BC, RF4E070BN
Keywords - RF1S40N10 MOSFET specs
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