RF1S640 PDF and Equivalents Search

 

RF1S640 Specs and Replacement

Type Designator: RF1S640

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 400 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm

Package: TO-262AA

RF1S640 substitution

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RF1S640 datasheet

 ..1. Size:128K  fairchild semi
 irf640 rf1s640 rf1s640sm.pdf pdf_icon

RF1S640

IRF640, RF1S640, RF1S640SM Data Sheet January 2002 18A, 200V, 0.180 Ohm, N-Channel Power Features MOSFETs 18A, 200V These are N-Channel enhancement mode silicon gate rDS(ON) = 0.180 power field effect transistors. They are advanced power Single Pulse Avalanche Energy Rated MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakd... See More ⇒

 ..2. Size:51K  harris semi
 irf640 irf641 irf642 irf643 rf1s640.pdf pdf_icon

RF1S640

IRF640, IRF641, IRF642, S E M I C O N D U C T O R IRF643, RF1S640, RF1S640SM 16A and 18A, 150V and 200V, 0.18 and 0.22 Ohm, N-Channel Power MOSFETs January 1998 Features Description 16A and 18A, 150V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power rDS(ON) = 0.18 and 0.22 MOSFETs designed, tested, and guar... See More ⇒

 ..3. Size:51K  harris semi
 rf1s640.pdf pdf_icon

RF1S640

IRF640, IRF641, IRF642, S E M I C O N D U C T O R IRF643, RF1S640, RF1S640SM 16A and 18A, 150V and 200V, 0.18 and 0.22 Ohm, N-Channel Power MOSFETs January 1998 Features Description 16A and 18A, 150V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power rDS(ON) = 0.18 and 0.22 MOSFETs designed, tested, and guar... See More ⇒

 9.1. Size:129K  fairchild semi
 irf630 rf1s630sm.pdf pdf_icon

RF1S640

IRF630, RF1S630SM Data Sheet January 2002 9A, 200V, 0.400 Ohm, N-Channel Power Features MOSFETs 9A, 200V These are N-Channel enhancement mode silicon gate rDS(ON) = 0.400 power field effect transistors. They are advanced power Single Pulse Avalanche Energy Rated MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanc... See More ⇒

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Detailed specifications: RE1J002YN, RE1L002SN, RF1S25N06, RF1S30N06LE, RF1S30P06, RF1S40N10, RF1S540, RF1S60P03, IRF9540N, RF1S70N06, RF1S9540, RF4C050AP, RF4C100BC, RF4E070BN, RF4E070GN, RF4E075AT, RF4E080BN

Keywords - RF1S640 MOSFET specs

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