RFD8P05 MOSFET Datasheet: P-Ch, 50V, 8A. Full specification with pinout and replacement list

RFD8P05 Specs and Replacement

   Type Designator: RFD8P05
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 30 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: TO251AA

RFD8P05 substitution

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RFD8P05 datasheet

0.1. Size:57K intersil
rfd8p05-sm rfp8p05.pdf pdf_icon

RFD8P05, RFD8P05SM, RFP8P05 Data Sheet July 1999 File Number 2384.2 8A, 50V, 0.300 Ohm, P-Channel Power Features MOSFETs 8A, 50V These products are P-Channel power MOSFETs rDS(ON) = 0.300 manufactured using the MegaFET process. This process, UIS SOA Rating Curve which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting i... See More ⇒

8.1. Size:134K fairchild semi
rfd8p06e-sm rfp8p06e.pdf pdf_icon

RFD8P06E, RFD8P06ESM, RFP8P06E Data Sheet January 2002 8A, 60V, 0.300 Ohm, P-Channel Power Features MOSFETs 8A, 60V These are P-Channel power MOSFETs manufactured using rDS(ON) = 0.300 the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Model sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, r... See More ⇒

8.2. Size:106K intersil
rfd8p06le-sm rfp8p06le.pdf pdf_icon

RFD8P06LE, RFD8P06LESM, RFP8P06LE Data Sheet July 1999 File Number 4273.1 8A, 60V, 0.300 Ohm, ESD Rated, Logic Features Level, P-Channel Power MOSFET 8A, 60V These products are P-Channel power MOSFETs rDS(ON) = 0.300 manufactured using the MegaFET process. This process, 2kV ESD Protected which uses feature sizes approaching those of LSI circuits, gives optimum utilizati... See More ⇒

8.3. Size:306K cn vbsemi
rfd8p06esm.pdf pdf_icon

RFD8P06ESM www.VBsemi.com P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A) Qg (Typ) 100 % UIS Tested 0.061 at VGS = - 10 V - 30 APPLICATIONS - 60 10 0.072 at VGS = - 4.5 V - 26 Load Switch S TO-252 G G D S Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter S... See More ⇒

Detailed specifications: RFD3055LESM , RFD3055SM , RFD3N08L , RFD3N08LSM , RFD4N06L , RFD4N06LSM , RFD7N10LE , RFD7N10LESM , IRFP260N , RFD8P05SM , RFD8P06E , RFD8P06ESM , RFD8P06LE , RFD8P06LESM , RFF60P06 , RFF70N06 , RFG30P05 .