SIS407ADN MOSFET Datasheet: P-Ch, 20V, 16.7A. Full specification with pinout and replacement list

SIS407ADN Specs and Replacement

Type Designator: SIS407ADN

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 16.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 540 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: 1212-8

SIS407ADN substitution

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SIS407ADN datasheet

..1. Size:621K vishay
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SiS407ADN www.vishay.com Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) RDS(on) ( ) MAX. ID (A) f, g Qg (TYP.) Low thermal resistance PowerPAK package 0.009 at VGS = -4.5 V -18 100 % Rg and UIS tested -20 0.0122 at VGS = -2.5 V -18 63 nC Material categorization 0.0190 at VGS = -1.8 V -18 For definitions o... See More ⇒

8.1. Size:531K vishay
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New Product SiS407DN Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)e, f Qg (Typ.) Definition 0.0095 at VGS = - 4.5 V - 25 TrenchFET Power MOSFET - 20 0.0138 at VGS = - 2.5 V - 25 38 nC Low Thermal Resistance PowerPAK Package with Small Size and Low 1.07 mm 0.0195 at VGS ... See More ⇒

9.1. Size:532K vishay
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New Product SiS406DN Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( )ID (A) TrenchFET Power MOSFET 0.011 at VGS = 10 V 14 30 PWM Optimized RoHS 0.0145 at VGS = 4.5 V 12.2 COMPLIANT New Low Thermal Resistance PowerPAK Package with Low 1.07 mm Profile 100 % Rg Tested 100 % UIS Tested AP... See More ⇒

9.2. Size:549K vishay
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SiS402DN Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a, g Qg (Typ.) Definition 0.006 at VGS = 10 V 35 TrenchFET Power MOSFET 30 12 nC 0.008 at VGS = 4.5 V 35 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC PowerPAK 1212-8 APPLICATION... See More ⇒

Detailed specifications: RF6E045AJ, SIS322DNT, SIS330DN, SIS332DN, SIS334DN, SIS376DN, SIS402DN, SIS406DN, AON7506, SIS407DN, SIS410DN, SIS412DN, SIS413DN, SIS414DN, SIS424DN, SIS426DN, SIS427EDN