All MOSFET. SIS414DN Datasheet

 

 

SIS414DN Datasheet and Replacement


   Type Designator: SIS414DN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 10.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 135 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: 1212-8
 

 SIS414DN substitution

   - MOSFET ⓘ Cross-Reference Search

 

 

SIS414DN Datasheet (PDF)

 ..1. Size:570K  vishay
 sis414dn.pdf pdf_icon

SIS414DN

New ProductSiS414DNVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A)a, g Qg (Typ.)Definition0.016 at VGS = 4.5 V 20 TrenchFET Power MOSFET30 8.2 nC0.020 at VGS = 2.5 V 20 100 % Rg Tested 100 % UIS TestedPowerPAK 1212-8 Compliant to RoHS Directive 2002/95/

 9.1. Size:534K  vishay
 sis413dn.pdf pdf_icon

SIS414DN

SiS413DNVishay SiliconixP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) 100% Rg and UIS Tested Material categorization:0.0094 at VGS = - 10 V - 18d- 30 35.4 nC For definitions of compliance please see0.0132 at VGS = - 4.5 V - 18dwww.vishay.com/doc?99912PowerPAK 1212-8APPLICATIONS

 9.2. Size:531K  vishay
 sis412dn.pdf pdf_icon

SIS414DN

New ProductSiS412DNVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.024 at VGS = 10 V 12 100 % Rg Tested30 3.8 nC0.030 at VGS = 4.5 V 12APPLICATIONSPowerPAK 1212-8 Notebook PC- System Power- Load SwitchSD3.30 mm

 9.3. Size:526K  vishay
 sis410dn.pdf pdf_icon

SIS414DN

SiS410DNVishay SiliconixN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.) Definition TrenchFET Power MOSFET0.0048 at VGS = 10 V 3520 12.7 nC 100 % Rg and UIS Tested0.0063 at VGS = 4.5 V 35 Compliant to RoHS Directive 2002/95/ECPowerPAK 1212-8APPLICATIONS DC

SHOW MORE

Datasheet: SIS376DN , SIS402DN , SIS406DN , SIS407ADN , SIS407DN , SIS410DN , SIS412DN , SIS413DN , BS170 , SIS424DN , SIS426DN , SIS427EDN , SIS429DNT , SIS430DN , SIS434DN , SIS435DNT , SIS436DN .

History: SIHL640S | SIS426DN | SIHLD014

Keywords - SIS414DN MOSFET datasheet

 SIS414DN cross reference
 SIS414DN equivalent finder
 SIS414DN lookup
 SIS414DN substitution
 SIS414DN replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility

 

 
Back to Top

 


 
.