All MOSFET. RFD8P05SM Datasheet

 

RFD8P05SM MOSFET. Datasheet pdf. Equivalent


   Type Designator: RFD8P05SM
   Marking Code: D8P05
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 80 nC
   trⓘ - Rise Time: 30 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: TO252AA

 RFD8P05SM Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RFD8P05SM Datasheet (PDF)

 7.1. Size:57K  intersil
 rfd8p05-sm rfp8p05.pdf

RFD8P05SM RFD8P05SM

RFD8P05, RFD8P05SM, RFP8P05Data Sheet July 1999 File Number 2384.28A, 50V, 0.300 Ohm, P-Channel Power FeaturesMOSFETs 8A, 50VThese products are P-Channel power MOSFETs rDS(ON) = 0.300manufactured using the MegaFET process. This process, UIS SOA Rating Curvewhich uses feature sizes approaching those of LSI circuits,gives optimum utilization of silicon, resulting i

 8.1. Size:134K  fairchild semi
 rfd8p06e-sm rfp8p06e.pdf

RFD8P05SM RFD8P05SM

RFD8P06E, RFD8P06ESM, RFP8P06EData Sheet January 20028A, 60V, 0.300 Ohm, P-Channel Power FeaturesMOSFETs 8A, 60VThese are P-Channel power MOSFETs manufactured using rDS(ON) = 0.300the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Modelsizes approaching those of LSI integrated circuits gives optimum utilization of silicon, r

 8.2. Size:106K  intersil
 rfd8p06le-sm rfp8p06le.pdf

RFD8P05SM RFD8P05SM

RFD8P06LE, RFD8P06LESM, RFP8P06LEData Sheet July 1999 File Number 4273.18A, 60V, 0.300 Ohm, ESD Rated, Logic FeaturesLevel, P-Channel Power MOSFET 8A, 60VThese products are P-Channel power MOSFETs rDS(ON) = 0.300manufactured using the MegaFET process. This process, 2kV ESD Protectedwhich uses feature sizes approaching those of LSI circuits,gives optimum utilizati

 8.3. Size:306K  cn vbsemi
 rfd8p06esm.pdf

RFD8P05SM RFD8P05SM

RFD8P06ESMwww.VBsemi.comP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ) 100 % UIS Tested0.061 at VGS = - 10 V - 30APPLICATIONS- 60 100.072 at VGS = - 4.5 V - 26 Load SwitchSTO-252GG D STop ViewDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParameter S

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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