All MOSFET. SIS435DNT Datasheet

 

SIS435DNT Datasheet and Replacement


   Type Designator: SIS435DNT
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 3.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.9 V
   |Id|ⓘ - Maximum Drain Current: 22 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 98 nC
   trⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 620 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0054 Ohm
   Package: 1212-8
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SIS435DNT Datasheet (PDF)

 ..1. Size:175K  vishay
 sis435dnt.pdf pdf_icon

SIS435DNT

SiS435DNTVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Gen III P-Channel Power MOSFETVDS (V) RDS(on) () Max.ID (A)a Qg (Typ.) Thin 0.8 mm max. height 100 % Rg and UIS Tested0.0054 at VGS = - 4.5V - 30a Material categorization:0.0060 at VGS = - 3.7 V - 30a- 20 57 nC For definitions of compliance please see 0.0083

 9.1. Size:152K  vishay
 sis439dnt.pdf pdf_icon

SIS435DNT

SiS439DNTwww.vishay.comVishay SiliconixP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A)f Qg (Typ.) Low Thermal Resistance PowerPAK Package 0.0110 at VGS = - 10 V - 50ewith Small Size and Low 0.75 mm Profile- 30 23 nC0.0195 at VGS= - 4.5 V - 43.5 100 % Rg and UIS Tested Material categorization:

 9.2. Size:566K  vishay
 sis436dn.pdf pdf_icon

SIS435DNT

New ProductSiS436DNVishay SiliconixN-Channel 25-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a, g Qg (Typ.)Definition0.0105 at VGS = 10 V TrenchFET Gen III Power MOSFET1625 6.7 nC 100 % Rg Tested0.013 at VGS = 4.5 V 16 100 % UIS TestedPowerPAK 1212-8APPLICATIONS DC/DC Conver

 9.3. Size:566K  vishay
 sis438dn.pdf pdf_icon

SIS435DNT

New ProductSiS438DNVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a, g Qg (Typ.)Definition0.0095 at VGS = 10 V TrenchFET Gen III Power MOSFET1620 7.3 nC 100 % Rg Tested0.0125 at VGS = 4.5 V 16 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECPowe

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