SIS456DN Datasheet. Specs and Replacement

Type Designator: SIS456DN  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 21 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 350 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0051 Ohm

Package: 1212-8

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SIS456DN datasheet

 ..1. Size:551K  vishay
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SIS456DN

SiS456DN Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.0051 at VGS = 10 V 35 TrenchFET Power MOSFET 30 18.5 nC 0.0068 at VGS = 4.5 V 35 100 % Rg Tested 100 % UIS Tested PowerPAK 1212-8 Compliant to RoHS Directive 2002/95/EC S APPLICATI... See More ⇒

 9.1. Size:563K  vishay
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SIS456DN

New Product SiS452DN Vishay Siliconix N-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.00325 at VGS = 10 V TrenchFET Power MOSFET 35 12 13.5 nC 100 % Rg Tested 0.0048 at VGS = 4.5 V 35 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC PowerPAK 12... See More ⇒

 9.2. Size:544K  vishay
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SIS456DN

SiS454DN Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.0037 at VGS = 10 V 35 TrenchFET Power MOSFET 20 18.5 nC 100 % Rg and UIS Tested 0.0054 at VGS = 4.5 V 35 Compliant to RoHS Directive 2002/95/EC PowerPAK 1212-8 APPLICATIONS DC/DC Con... See More ⇒

Detailed specifications: SIS436DN, SIS438DN, SIS439DNT, SIS443DN, SIS444DN, SIS447DN, SIS452DN, SIS454DN, 2N60, SIS468DN, SIS472ADN, SIS472DN, SIS476DN, SIS478DN, SIS496EDNT, SIS612EDNT, SIS698DN

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