SIS456DN MOSFET. Datasheet pdf. Equivalent
Type Designator: SIS456DN
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
|Id|ⓘ - Maximum Drain Current: 21 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 36 nC
trⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 350 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0051 Ohm
Package: 1212-8
SIS456DN Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SIS456DN Datasheet (PDF)
sis456dn.pdf
SiS456DNVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0051 at VGS = 10 V 35 TrenchFET Power MOSFET30 18.5 nC0.0068 at VGS = 4.5 V 35 100 % Rg Tested 100 % UIS TestedPowerPAK 1212-8 Compliant to RoHS Directive 2002/95/ECS APPLICATI
sis452dn.pdf
New ProductSiS452DNVishay SiliconixN-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.00325 at VGS = 10 V TrenchFET Power MOSFET3512 13.5 nC 100 % Rg Tested0.0048 at VGS = 4.5 V 35 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECPowerPAK 12
sis454dn.pdf
SiS454DNVishay SiliconixN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0037 at VGS = 10 V 35 TrenchFET Power MOSFET20 18.5 nC 100 % Rg and UIS Tested0.0054 at VGS = 4.5 V 35 Compliant to RoHS Directive 2002/95/ECPowerPAK 1212-8APPLICATIONS DC/DC Con
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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