All MOSFET. GP28S50XN220 Datasheet

 

GP28S50XN220 Datasheet and Replacement


   Type Designator: GP28S50XN220
   Marking Code: GP28S50X
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 245 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 28 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 40.7 nC
   tr ⓘ - Rise Time: 104.5 nS
   Cossⓘ - Output Capacitance: 1766.7 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm
   Package: TO220
 

 GP28S50XN220 substitution

   - MOSFET ⓘ Cross-Reference Search

 

GP28S50XN220 Datasheet (PDF)

 7.1. Size:495K  champion
 gp28s50.pdf pdf_icon

GP28S50XN220

GP28S50POWER FIELD EFFECT TRANSISTORGENERAL DESCRIPTION FEATURESThis high voltage MOSFET uses an advanced termination Robust High Voltage Terminationscheme to provide enhanced voltage-blocking capability Avalanche Energy Specifiedwithout degrading performance over time. In addition, this Source-to-Drain Diode Recovery Time Comparable to aadvanced MOSFET is designed to wi

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: IPP65R150CFDA

Keywords - GP28S50XN220 MOSFET datasheet

 GP28S50XN220 cross reference
 GP28S50XN220 equivalent finder
 GP28S50XN220 lookup
 GP28S50XN220 substitution
 GP28S50XN220 replacement

 

 
Back to Top

 


 
.