GP28S50GN247 Specs and Replacement
Type Designator: GP28S50GN247
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 227 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 28 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 104.5 nS
Cossⓘ - Output Capacitance: 1766.7 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm
Package: TO247
GP28S50GN247 substitution
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GP28S50GN247 datasheet
gp28s50.pdf
GP28S50 POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability Avalanche Energy Specified without degrading performance over time. In addition, this Source-to-Drain Diode Recovery Time Comparable to a advanced MOSFET is designed to wi... See More ⇒
Detailed specifications: FW206, GP28S50XN220, GP28S50XN220FP, GP28S50XN3P, GP28S50XN247, GP28S50GN220, GP28S50GN220FP, GP28S50GN3P, AON7506, IPA70R360P7S, IPSA70R360P7S, IRF50N06, TK80E08K3, TK150E09NE, TSA9N90M, SIZ728DT, SIZ730DT
Keywords - GP28S50GN247 MOSFET specs
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