RFG50N05L Specs and Replacement
Type Designator: RFG50N05L
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 110 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 50 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
Package: TO247
RFG50N05L substitution
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RFG50N05L datasheet
rfg50n05l rfp50n05l.pdf
RFG50N05L, RFP50N05L Data Sheet July 1999 File Number 2424.3 50A, 50V, 0.022 Ohm, Logic Level, Features N-Channel Power MOSFETs 50A, 50V These are logic-level N-channel power MOSFETs rDS(ON) = 0.022 manufactured using the MegaFET process. This process, UIS SOA Rating Curve (Single Pulse) which uses feature sizes approaching those of LSI integrated circuits gives optimum... See More ⇒
rfg50n06 rfp50n06 rf1s50n06sm.pdf
RFG50N06, RFP50N06, RF1S50N06SM Data Sheet January 2002 50A, 60V, 0.022 Ohm, N-Channel Power Features MOSFETs 50A, 60V These N-Channel power MOSFETs are manufactured using rDS(ON) = 0.022 the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Model sizes approaching those of LSI integrated circuits gives optimum utilization of silico... See More ⇒
rfg50n06le rfp50n06le rf1s50n06lesm.pdf
RFG50N06LE, RFP50N06LE, RF1S50N06LESM Data Sheet October 1999 File Number 4072.3 50A, 60V, 0.022 Ohm, Logic Level Features N-Channel Power MOSFETs 50A, 60V These N-Channel enhancement mode power MOSFETs are rDS(ON) = 0.022 manufactured using the latest manufacturing process Temperature Compensating PSPICE Model technology. This process, which uses feature sizes approa... See More ⇒
Detailed specifications: RFF60P06, RFF70N06, RFG30P05, RFG30P06, RFG40N10, RFG40N10LE, RFG45N06, RFG45N06LE, AON7408, RFG50N06, RFG50N06LE, RFG60P03, RFG60P05E, RFG60P06E, RFG70N06, RFG75N05E, RFL1N10L
Keywords - RFG50N05L MOSFET specs
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