AP9915J Datasheet and Replacement
Type Designator: AP9915J
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 26 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 49.5 nS
Cossⓘ - Output Capacitance: 126 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: TO251
AP9915J substitution
AP9915J Datasheet (PDF)
ap9915h ap9915j.pdf
AP9915H/JAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETLow on-resistance BVDSS 20V DCapable of 2.5V gate drive RDS(ON) 50m Low drive current ID 20A GSingle Drive Requirement SDescriptionGThe Advanced Power MOSFETs from APEC provide theDSTO-252(H)designer with th
ap9915gk.pdf
AP9915GKPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 20VD Lower Gate Charge RDS(ON) 50m Fast Switching Characteristic ID 6.2ASD RoHS CompliantSOT-223GDescriptionDThe Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,G l
ap9918h ap9918j.pdf
AP9918H/JAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETLow on-resistance BVDSS 20V DCapable of 2.5V gate drive RDS(ON) 14m Low drive current ID 45A GSurface mount package SDescriptionGThe Advanced Power MOSFETs from APEC provide theDSTO-252(H)designer with the b
ap9918gj.pdf
AP9918GH/JPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETLow on-resistance BVDSS 20V DCapable of 2.5V gate drive RDS(ON) 14m Low drive current ID 45A GSurface mount package SDescriptionGThe Advanced Power MOSFETs from APEC provide theDSTO-2
Datasheet: SKI07114 , SKI07171 , SKI10123 , SKI10195 , SKI10297 , SW1N55D , AON7430L , AP9915H , IRF540N , FHP730 , FIR120N055PG , FTP16N06B , HY4008W , HY4008A , ITA08N65R , ME15N10G , MMF80R650P .
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