FHP730 Specs and Replacement
Type Designator: FHP730
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 106 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.95 Ohm
Package: TO220AB
FHP730 substitution
- MOSFET ⓘ Cross-Reference Search
FHP730 datasheet
fhp730.pdf
FHP730 FHP730 N MOS AC-DC H PMW DC-DC 5.5A,400V,RDS(on)( 0.9 TC=25 VDSS 400 V ... See More ⇒
fhp730a fhf730a.pdf
N N-CHANNEL MOSFET FHP730A/FHF730A MAIN CHARACTERISTICS FEATURES ID 5.2A Low gate charge VDSS 400V Crss ( 17pF) Low Crss (typical 17pF ) Rdson-typ @Vgs=10V 0.96 Fast switching Qg-typ 16nC 100% 100% avalanche tested dv/dt Improv... See More ⇒
Detailed specifications: SKI07171, SKI10123, SKI10195, SKI10297, SW1N55D, AON7430L, AP9915H, AP9915J, IRF540, FIR120N055PG, FTP16N06B, HY4008W, HY4008A, ITA08N65R, ME15N10G, MMF80R650P, NCE65T130D
Keywords - FHP730 MOSFET specs
FHP730 cross reference
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: 2SK1589-T1B | STF20N90K5 | AP4961GM | AP4957AGM | 2SK2117 | WNM2025 | IRF7389
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