NCE65T130 Specs and Replacement
Type Designator: NCE65T130
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 260 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 28 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ -
Output Capacitance: 120 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
Package: TO220
- MOSFET ⓘ Cross-Reference Search
NCE65T130 datasheet
..1. Size:616K ncepower
nce65t130d nce65t130 nce65t130f.pdf 
NCE65T130D,NCE65T130,NCE65T130F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 110 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 28 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and... See More ⇒
..2. Size:616K ncepower
nce65t130.pdf 
NCE65T130D,NCE65T130,NCE65T130F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 110 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 28 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and... See More ⇒
..3. Size:616K ncepower
nce65t130 nce65t130f.pdf 
NCE65T130D,NCE65T130,NCE65T130F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 110 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 28 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and... See More ⇒
0.1. Size:469K ncepower
nce65t130t.pdf 
NCE65T130T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 110 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 28 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power app... See More ⇒
0.2. Size:616K ncepower
nce65t130f.pdf 
NCE65T130D,NCE65T130,NCE65T130F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 110 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 28 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and... See More ⇒
7.1. Size:481K ncepower
nce65t1k9i.pdf 
NCE65T1K9K,NCE65T1K9I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 1600 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the ID 3 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri... See More ⇒
7.2. Size:622K ncepower
nce65t180d nce65t180 nce65t180f.pdf 
NCE65T180D,NCE65T180,NCE65T180F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 180 m DS(ON) MAX with low gate charge. This super junction MOSFET fits the ID 21 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, an... See More ⇒
7.3. Size:599K ncepower
nce65t1k2 nce65t1k2d nce65t1k2f.pdf 
NCE65T1K2,NCE65T1K2D,NCE65T1K2F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 950 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the ID 4 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and... See More ⇒
7.4. Size:1722K ncepower
nce65t180f nce65t180 nce65t180d.pdf 
NCE65T180D,NCE65T180,NCE65T180F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 190 m DS(ON) MAX with low gate charge. This super junction MOSFET fits the I 21 A D industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and indus... See More ⇒
7.5. Size:476K ncepower
nce65t1k2i.pdf 
NCE65T1K2K,NCE65T1K2I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 950 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the ID 4 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industria... See More ⇒
7.6. Size:1722K ncepower
nce65t180f.pdf 
NCE65T180D,NCE65T180,NCE65T180F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 190 m DS(ON) MAX with low gate charge. This super junction MOSFET fits the I 21 A D industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and indus... See More ⇒
7.7. Size:494K ncepower
nce65t180v.pdf 
NCE65T180V N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 199 m DS(ON) MAX with low gate charge. This super junction MOSFET fits the ID 21 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power ap... See More ⇒
7.8. Size:476K ncepower
nce65t1k2k.pdf 
NCE65T1K2K,NCE65T1K2I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 950 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the ID 4 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industria... See More ⇒
7.9. Size:1722K ncepower
nce65t180d.pdf 
NCE65T180D,NCE65T180,NCE65T180F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 190 m DS(ON) MAX with low gate charge. This super junction MOSFET fits the I 21 A D industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and indus... See More ⇒
7.10. Size:476K ncepower
nce65t1k2k nce65t1k2i.pdf 
NCE65T1K2K,NCE65T1K2I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 950 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the ID 4 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industria... See More ⇒
7.11. Size:1722K ncepower
nce65t180.pdf 
NCE65T180D,NCE65T180,NCE65T180F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 190 m DS(ON) MAX with low gate charge. This super junction MOSFET fits the I 21 A D industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and indus... See More ⇒
7.12. Size:481K ncepower
nce65t1k9i nce65t1k9k.pdf 
NCE65T1K9K,NCE65T1K9I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 1600 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the ID 3 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri... See More ⇒
7.13. Size:476K ncepower
nce65t1k2i nce65t1k2k.pdf 
NCE65T1K2K,NCE65T1K2I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 950 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the ID 4 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industria... See More ⇒
7.14. Size:599K ncepower
nce65t1k2f.pdf 
NCE65T1K2,NCE65T1K2D,NCE65T1K2F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 950 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the ID 4 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and... See More ⇒
7.15. Size:404K ncepower
nce65t180t.pdf 
NCE65T180T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 180 m DS(ON) MAX with low gate charge. This super junction MOSFET fits the ID 21 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power ap... See More ⇒
7.16. Size:481K ncepower
nce65t1k9k.pdf 
NCE65T1K9K,NCE65T1K9I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 1600 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the ID 3 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri... See More ⇒
Detailed specifications: FIR120N055PG, FTP16N06B, HY4008W, HY4008A, ITA08N65R, ME15N10G, MMF80R650P, NCE65T130D, IRFP260N, NCE65T130F, NCEP60T12A, NTMFS4955N, SE6880, SW50N06, 2SK3642-ZK, BUZ384, EMA09N03AN
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