NTMFS4C09N MOSFET. Datasheet pdf. Equivalent
Type Designator: NTMFS4C09N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.51 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.1 V
|Id|ⓘ - Maximum Drain Current: 16.4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 10.9 nC
trⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 610 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0058 Ohm
Package: SO8FL
NTMFS4C09N Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTMFS4C09N Datasheet (PDF)
ntmfs4c09n.pdf
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NTMFS4C09NMOSFET Power, Single,N-Channel, SO-8 FL30 V, 52 AFeatureswww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS5.8 mW @ 10 V30 V 52 ACompliant8.5 mW @ 4.5 VA
ntmfs4c09nt1g.pdf
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NTMFS4C09NPower MOSFET30 V, 52 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseswww.onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant5.8 mW @ 10 VApplications30 V 52 A8.5 mW @
ntmfs4c06n.pdf
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NTMFS4C06NMOSFET Power, Single,N-Channel, SO-8 FL30 V, 69 AFeatureswww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS4.0 mW @ 10 VCompliant30 V 69 A6.0 mW @ 4.5 VA
ntmfs4c05nt1g.pdf
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NTMFS4C05NPower MOSFET30 V, 78 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseswww.onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXApplications3.4 mW @ 10 V30 V 78 A CPU P
ntmfs4c054n.pdf
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NTMFS4C054NMOSFET Power, Single,N-Channel, SO-8 FL30 V, 80 AFeatureswww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2.54 mW @ 10 V30 V 80 ACompliant3.56 mW @ 4.5 V
ntmfs4c022n.pdf
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MOSFET Power, Single,N-Channel, SO-8FL30 V, 1.7 mW, 136 ANTMFS4C022NFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1.7 mW @ 10 V30 VCompliant136 A2.4 mW
ntmfs4c029n.pdf
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NTMFS4C029NMOSFET Power, Single,N-Channel, SO-8 FL30 V, 46 AFeatures Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS5.88 mW @ 10 VCompliant30 V 46 A9.0 mW @ 4.5 V
ntmfs4c05n.pdf
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NTMFS4C05NPower MOSFET30 V, 78 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseswww.onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXApplications3.4 mW @ 10 V30 V 78 A CPU P
ntmfs4c020n.pdf
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MOSFET Power, Single,N-Channel, Logic Level,SO-8FL30 V, 0.67 mW, 370 ANTMFS4C020Nwww.onsemi.comFeatures Small Footprint (5x6 mm) for Compact DesignV(BR)DSS RDS(ON) MAX ID MAX Low RDS(on) to Minimize Conduction Losses0.67 mW @ 10 V Low QG and Capacitance to Minimize Driver Losses30 V0.78 mW @ 6.5 V 370 A Optimized for 4.5 Gate Drive These Devices
ntmfs4c03n.pdf
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NTMFS4C03NPower MOSFET30 V, 2.1 mW, 136 A, Single N-Channel,SO-8FLFeatures Small Footprint (5x6 mm) for Compact Designhttp://onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant2.1 mW @ 10 V30 V136 A2.8 mW @
ntmfs4c08n.pdf
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NTMFS4C08NPower MOSFET30 V, 52 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseswww.onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantApplications V(BR)DSS RDS(ON) MAX ID MAX CPU Power Delivery5.8 mW @ 10
ntmfs4c025n.pdf
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NTMFS4C025NMOSFET Power, Single,N-Channel, SO-8 FL30 V, 69 AFeatureswww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 3.41 mW @ 10 V30 V 69 ACompliant4.88 mW @ 4.5 V
ntmfs4c032n.pdf
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NTMFS4C032NMOSFET Power, Single,N-Channel, SO-8 FL30 V, 38 AFeatures Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS7.35 mW @ 10 VCompliant30 V 38 AApplications1
ntmfs4c027n.pdf
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NTMFS4C027NMOSFET Power, Single,N-Channel, SO-8 FL30 V, 52 AFeatures Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAXCompliant4.8 mW @ 10 V30 V 52 AApplications7.4
ntmfs4c06n.pdf
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NTMFS4C06NPower MOSFET30 V, 69 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseswww.onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant4.0 mW @ 10 VApplications30 V 69 A CPU P
ntmfs4c01n.pdf
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NTMFS4C01NPower MOSFET30 V, 0.9 mW, 303 A, Single N-Channel,SO-8FLFeatures Small Footprint (5x6 mm) for Compact Designhttp://onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant0.9 mW @ 10 V30 V303 A1.2 mW @
ntmfs4c028n.pdf
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NTMFS4C028NMOSFET Power, Single,N-Channel, SO-8 FL30 V, 52 AFeatureswww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS4.73 mW @ 10 V30 V 52 ACompliant7.0 mW @ 4.5 V
ntmfs4c024n.pdf
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NTMFS4C024NMOSFET Power, Single,N-Channel, SO-8 FL30 V, 78 AFeatureswww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2.8 mW @ 10 V30 V 78 ACompliant4.0 mW @ 4.5 V
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .