SMP40N10 Specs and Replacement
Type Designator: SMP40N10
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 80 nS
Cossⓘ - Output Capacitance: 750 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
Package: TO220AB
SMP40N10 substitution
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SMP40N10 datasheet
Detailed specifications: BUZ384, EMA09N03AN, FQB60N03L, FTP540, MT4953, NDP06N60Z, NTMFS4C09N, RU7588R3, 2SK3878, SWP30N06, SWI30N06, SWD30N06, SWP630, SWF630, SWD630, SW1N60A, SW1N60C
Keywords - SMP40N10 MOSFET specs
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