SWD630 MOSFET Datasheet: N-Ch, 200V, 10A. Full specification with pinout and replacement list

SWD630 Specs and Replacement

Type Designator: SWD630

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 88 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 140 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm

Package: TO-252

SWD630 substitution

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SWD630 datasheet

..1. Size:742K samwin
sw630 swp630 swf630 swd630.pdf pdf_icon

SAMWIN SW630 N-channel MOSFET TO-220F TO-220 TO-252 Features BVDSS 200V High ruggedness ID 10A RDS(ON) (Max 0.4 )@VGS=10V Gate Charge (Typ 20nC) RDS(ON) 0.4ohm 1 Improved dv/dt Capability 2 100% Avalanche Tested 1 1 3 2 2 3 3 2 1. Gate 2. Drain 3. Source General Description 1 This power MOSFET is produced with advanced VDMOS technology of SAMW... See More ⇒

0.1. Size:764K samwin
sw630d swp630d swd630d.pdf pdf_icon

SW630D N-channel Enhanced mode TO-220/TO-252 MOSFET Features TO-220 TO-252 BVDSS 200V High ruggedness ID 9A Low RDS(ON) (Typ 0.27 )@VGS=10V RDS(ON) 0.27 Low Gate Charge (Typ 20nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 2 Application Synchronous Rectification, 3 3 DC-DC 1 1. Gate 2. Drain 3. Source 3 G... See More ⇒

0.2. Size:780K samwin
swp630d swd630d.pdf pdf_icon