SWD630 Datasheet and Replacement
Type Designator: SWD630
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 88 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 140 nS
Cossⓘ - Output Capacitance: 120 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: TO-252
SWD630 substitution
SWD630 Datasheet (PDF)
sw630 swp630 swf630 swd630.pdf
SAMWIN SW630N-channel MOSFETTO-220F TO-220 TO-252FeaturesBVDSS : 200V High ruggednessID : 10A RDS(ON) (Max 0.4 )@VGS=10V Gate Charge (Typ 20nC)RDS(ON) : 0.4ohm1 Improved dv/dt Capability 2 100% Avalanche Tested1 132 23 321. Gate 2. Drain 3. SourceGeneral Description1This power MOSFET is produced with advanced VDMOS technology of SAMW
sw630d swp630d swd630d.pdf
SW630D N-channel Enhanced mode TO-220/TO-252 MOSFET Features TO-220 TO-252 BVDSS : 200V High ruggedness ID : 9A Low RDS(ON) (Typ 0.27)@VGS=10V RDS(ON) : 0.27 Low Gate Charge (Typ 20nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 2 Application:Synchronous Rectification, 3 3 DC-DC 1 1. Gate 2. Drain 3. Source 3 G
swp630d swd630d.pdf
SW630D N-channel Enhanced mode TO-220/TO-252 MOSFET Features TO-220 TO-252 BVDSS : 200V High ruggedness ID : 9A Low RDS(ON) (Typ 0.27)@VGS=10V RDS(ON) : 0.27 Low Gate Charge (Typ 20nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 2 Application:Synchronous Rectification, 3 3 DC-DC 1 1. Gate 2. Drain 3. Source 3 G
Datasheet: NTMFS4C09N , RU7588R3 , SMP40N10 , SWP30N06 , SWI30N06 , SWD30N06 , SWP630 , SWF630 , AO3400 , SW1N60A , SW1N60C , SW1N60D , SW1N60E , SW226N , SW226NV , SW2N10 , SW2N60 .
History: FQP90N10V2 | TSP120N10AT | LNG4N80 | CJBD3020 | IRF7910PBF-1 | TTB105N06A | LNG4N65
Keywords - SWD630 MOSFET datasheet
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History: FQP90N10V2 | TSP120N10AT | LNG4N80 | CJBD3020 | IRF7910PBF-1 | TTB105N06A | LNG4N65
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