All MOSFET. SWD630 Datasheet

 

SWD630 Datasheet and Replacement


   Type Designator: SWD630
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 88 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 140 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO-252
 

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SWD630 Datasheet (PDF)

 ..1. Size:742K  samwin
 sw630 swp630 swf630 swd630.pdf pdf_icon

SWD630

SAMWIN SW630N-channel MOSFETTO-220F TO-220 TO-252FeaturesBVDSS : 200V High ruggednessID : 10A RDS(ON) (Max 0.4 )@VGS=10V Gate Charge (Typ 20nC)RDS(ON) : 0.4ohm1 Improved dv/dt Capability 2 100% Avalanche Tested1 132 23 321. Gate 2. Drain 3. SourceGeneral Description1This power MOSFET is produced with advanced VDMOS technology of SAMW

 0.1. Size:764K  samwin
 sw630d swp630d swd630d.pdf pdf_icon

SWD630

SW630D N-channel Enhanced mode TO-220/TO-252 MOSFET Features TO-220 TO-252 BVDSS : 200V High ruggedness ID : 9A Low RDS(ON) (Typ 0.27)@VGS=10V RDS(ON) : 0.27 Low Gate Charge (Typ 20nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 2 Application:Synchronous Rectification, 3 3 DC-DC 1 1. Gate 2. Drain 3. Source 3 G

 0.2. Size:780K  samwin
 swp630d swd630d.pdf pdf_icon

SWD630

SW630D N-channel Enhanced mode TO-220/TO-252 MOSFET Features TO-220 TO-252 BVDSS : 200V High ruggedness ID : 9A Low RDS(ON) (Typ 0.27)@VGS=10V RDS(ON) : 0.27 Low Gate Charge (Typ 20nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 2 Application:Synchronous Rectification, 3 3 DC-DC 1 1. Gate 2. Drain 3. Source 3 G

Datasheet: NTMFS4C09N , RU7588R3 , SMP40N10 , SWP30N06 , SWI30N06 , SWD30N06 , SWP630 , SWF630 , AO3400 , SW1N60A , SW1N60C , SW1N60D , SW1N60E , SW226N , SW226NV , SW2N10 , SW2N60 .

History: IRLU9343-701PBF | SFP043N100C3

Keywords - SWD630 MOSFET datasheet

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