SW1N60D MOSFET Datasheet: N-Ch, 600V, 1A. Full specification with pinout and replacement list

SW1N60D Specs and Replacement

Type Designator: SW1N60D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 65.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 28 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 8.5 Ohm

Package: TO-251

SW1N60D substitution

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SW1N60D datasheet

..1. Size:635K samwin
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SAMWIN SW1N60D N-channel I-PAK/TO-92 MOSFET TO-92 TO-251 Features BVDSS 600V ID 1A High ruggedness RDS(ON) (Max8.5 )@VGS=10V RDS(ON) 8.5 Gate Charge (Typical 6.8 nC) Improved dv/dt Capability 1 100% Avalanche Tested 1 2 2 2 3 3 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produced with advanced VDMOS... See More ⇒

8.1. Size:220K 1
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8.2. Size:503K samsung
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Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 12 Rugged Gate Oxide Technology Lower Input Capacitance ID = 1 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 600V 2 Low RDS(ON) 9.390 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characte... See More ⇒

8.3. Size:481K samwin
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SAMWIN SW1N60A N-channel MOSFET BVDSS 600V Features TO-92 ID 0.8A High ruggedness RDS(ON) 15ohm RDS(ON) (Max 15 )@VGS=10V Gate Charge (Typical 6nC) Improved dv/dt Capability 1 2 100% Avalanche Tested 2 3 1. Gate 2. Drain 3. Source 1 General Description 3 This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enab... See More ⇒