All MOSFET. SW2N60 Datasheet

 

SW2N60 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SW2N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 108 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 15 nC
   trⓘ - Rise Time: 23.5 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
   Package: TO-220

 SW2N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SW2N60 Datasheet (PDF)

 ..1. Size:797K  samwin
 sw2n60.pdf

SW2N60 SW2N60

SW2N60SW2N60 SAMWIN N-channel MOSFET BVDSS : 600V TO-220F TO-220 TO-251 Features ID : 2.0A High ruggedness RDS(ON) : 5.0ohm RDS(ON) (Max 5.0 )@VGS=10V Gate Charge (Typical 15nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 1 2 3 2 3 3 1 1. Gate 2. Drain 3. Source General Description 3 This power MOSFET is produced wit

 0.1. Size:218K  1
 ssi2n60a ssw2n60a.pdf

SW2N60 SW2N60

 0.2. Size:647K  fairchild semi
 ssi2n60b ssi2n60b ssw2n60b.pdf

SW2N60 SW2N60

November 2001SSW2N60B / SSI2N60B600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.0A, 600V, RDS(on) = 5.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12.5 nC)planar, DMOS technology. Low Crss ( typical 7.6 pF)This advanced technology has been especially tailored

 0.3. Size:648K  fairchild semi
 ssw2n60b ssi2n60b.pdf

SW2N60 SW2N60

November 2001SSW2N60B / SSI2N60B600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.0A, 600V, RDS(on) = 5.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12.5 nC)planar, DMOS technology. Low Crss ( typical 7.6 pF)This advanced technology has been especially tailored

 0.4. Size:509K  samsung
 ssw2n60a.pdf

SW2N60 SW2N60

Advanced Power MOSFETFEATURESBVDSS = 600 V Avalanche Rugged TechnologyRDS(on) = 5.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 2 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V2 Lower RDS(ON) : 3.892 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Chara

 0.5. Size:443K  samwin
 sw2n60b.pdf

SW2N60 SW2N60

SAMWIN SW2N60B N-channel MOSFET TO-220F IPAK DPAK TO-126 BVDSS : 600V Features ID : 2.0A High ruggedness RDS(ON) : 4.5ohm RDS(ON) (Max 4.5 )@VGS=10V Gate Charge (Typical 7.5nC) 2 Improved dv/dt Capability 1 2 1 2 1 100% Avalanche Tested 3 1 3 2 2 3 3 1 1. Gate 2. Drain 3. Source General Description 3 This power MOSFET is

 0.6. Size:895K  samwin
 sw2n60a1.pdf

SW2N60 SW2N60

SAMWIN SW2N60A1 SW2N60A1N-channel IPAK/TO-220F MOSFET TO-251 TO-220F BVDSS : 600V Features ID : 2.0A High ruggedness RDS(ON) : 5.0ohm RDS(ON) (Max 5.0 )@VGS=10V Gate Charge (Typical 10nC) Improved dv/dt Capability 1 1 2 100% Avalanche Tested 2 2 3 3 1. Gate 2. Drain 3. Source 1 General Description 3 This power MOSFET is produced w

 0.7. Size:739K  samwin
 sw2n60d.pdf

SW2N60 SW2N60

SAMWIN SW2N60D N-channel I-PAK/D-PAK/TO220F MOSFET BVDSS : 600V Features TO-252 TO-251 TO-220F ID : 2A High ruggedness RDS(ON) : 4.5 RDS(ON) (Max 4.5)@VGS=10V Gate Charge (Typ 9nC) Improved dv/dt Capability 1 1 2 1 100% Avalanche Tested 2 3 2 2 3 3 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produced with ad

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SI1012X | HGP098N10S | JCS4N60VB

 

 
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