SW2N65 Datasheet and Replacement
Type Designator: SW2N65
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 62.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 40 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 5.5 Ohm
Package: TO-220
SW2N65 Datasheet (PDF)
sw2n65.pdf

SW2N65SAMWINN-channel MOSFETBVDSS : 650VTO-220F TO-220FeaturesID : 2.0A High ruggednessRDS(ON) : 5.5ohm RDS(ON) (Max 5.5 )@VGS=10V Gate Charge (Typical 7.8nC) Improved dv/dt Capability 2 100% Avalanche Tested1 12 23 311. Gate 2. Drain 3. Source3General DescriptionThis power MOSFET is produced with advanced VDMOS technology of SAMWIN.
sw2n65b.pdf

SAMWINSW2N65BSW2N65BN-channel MOSFETTO-220F BVDSS : 650VFeaturesID : 2.0A High ruggednessRDS(ON) : 5.6ohm RDS(ON) (Max 5.6 )@VGS=10V Gate Charge (Typical 7.7nC) Improved dv/dt Capability 2 100% Avalanche Tested12311. Gate 2. Drain 3. Source3General DescriptionThis power MOSFET is produced with advanced VDMOS technology of SAMWIN.This
ssi2n60b ssi2n60b ssw2n60b.pdf

November 2001SSW2N60B / SSI2N60B600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.0A, 600V, RDS(on) = 5.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12.5 nC)planar, DMOS technology. Low Crss ( typical 7.6 pF)This advanced technology has been especially tailored
Datasheet: SW1N60E , SW226N , SW226NV , SW2N10 , SW2N60 , SW2N60A1 , SW2N60B , SW2N60D , AON7506 , SW2N65B , SW2N70 , SW3N10 , SW3N80C , SW4N60 , SW4N60A , SW4N60B , SW4N60D .
History: VBM1606
Keywords - SW2N65 MOSFET datasheet
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History: VBM1606



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