SW4N60D Datasheet and Replacement
Type Designator: SW4N60D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 152.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 57 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
Package: TO-251N
SW4N60D substitution
SW4N60D Datasheet (PDF)
sw4n60d.pdf

SAMWIN SW4N60D N-channel TO-220F/I-PAKN/D-PAK MOSFET BVDSS : 600V Features TO-220F TO-251N TO-252 ID : 4A High ruggedness RDS(ON) : 2.2 RDS(ON) (Max 2.2)@VGS=10V Gate Charge (Typ 18nC) Improved dv/dt Capability 1 2 1 1 2 2 100% Avalanche Tested 2 3 3 3 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produc
sw4n60dc swi4n60dc swd4n60dc.pdf

SW4N60DCN-channel Enhancement mode TO-251/TO-252 MOSFETFeaturesTO-251 TO-252 BVDSS : 600VID : 4A High ruggedness RDS(ON) (Typ 2.0)@VGS=10VRDS(ON) : 2.0 Gate Charge (Typ 17nC) Improved dv/dt Capability 121 2 100% Avalanche Tested2 33 Application: LED,Charge11. Gate 2. Drain 3. Source3General DescriptionThis power MOSFET is produce
ssi4n60b ssi4n60b ssw4n60b.pdf

November 2001SSW4N60B / SSI4N60B600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.0A, 600V, RDS(on) = 2.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 22 nC)planar, DMOS technology. Low Crss ( typical 14 pF)This advanced technology has been especially tailored to
Datasheet: SW2N65 , SW2N65B , SW2N70 , SW3N10 , SW3N80C , SW4N60 , SW4N60A , SW4N60B , 13N50 , SW4N60K , SW4N60V , SW4N65B , SW4N65D , SW4N65K , SW4N65U , SW4N70B , SW4N70K .
History: FQI15P12TU | BLF7G15LS-300P
Keywords - SW4N60D MOSFET datasheet
SW4N60D cross reference
SW4N60D equivalent finder
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History: FQI15P12TU | BLF7G15LS-300P



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