SW4N60K MOSFET. Datasheet pdf. Equivalent
Type Designator: SW4N60K
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 106.4 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 4 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 13 nC
Rise Time (tr): 25 nS
Drain-Source Capacitance (Cd): 290 pF
Maximum Drain-Source On-State Resistance (Rds): 1.15 Ohm
Package: TO-251
SW4N60K Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SW4N60K Datasheet (PDF)
0.1. sw4n60k.pdf 
Size:650K _samwin
SAMWIN SW4N60K N-channel TO-220F/I-PAK/D-PAK MOSFET BVDSS : 600V Features TO-220F TO-251 TO-252 ID : 4A ■ High ruggedness RDS(ON) : 1.15Ω ■ RDS(ON) (Max 1.15Ω)@VGS=10V ■ Gate Charge (Typ 13nC) ■ Improved dv/dt Capability 1 1 1 2 2 2 ■ 100% Avalanche Tested 2 3 3 3 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produced
8.1. ssi4n60b ssi4n60b ssw4n60b.pdf Size:644K _fairchild_semi
November 2001 SSW4N60B / SSI4N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 4.0A, 600V, RDS(on) = 2.5Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 22 nC) planar, DMOS technology. • Low Crss ( typical 14 pF) This advanced technology has been especially tailored to
8.2. ssw4n60a.pdf Size:503K _samsung
Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 2.5 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 4 A Improved Gate Charge Extended Safe Operating Area µ Lower Leakage Current : 25 A (Max.) @ VDS = 600V 2 Lower RDS(ON) : 2.037 Ω (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Chara
8.3. sw4n60b.pdf Size:917K _samwin
SAMWIN SW4N60B N-channel I-PAK/D-PAK/TO-220F MOSFET TO-220F TO-251 TO-252 BVDSS : 600V Features ID : 4A ■ High ruggedness RDS(ON) : 2.5Ω ■ RDS(ON) (Max 2.5 Ω)@VGS=10V ■ Gate Charge (Typ 11nC) 1 ■ Improved dv/dt Capability 1 2 2 1 3 2 ■ 100% Avalanche Tested 3 2 3 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produce
8.4. sw4n60.pdf Size:371K _samwin
SW4N60 SAMWIN N-channel MOSFET BVDSS : 600V Features TO-220F TO-220 ID : 4.0A ■ High ruggedness RDS(ON) : 2.2ohm ■ RDS(ON) (Max 2.2 Ω)@VGS=10V ■ Gate Charge (Typ 30nC) ■ Improved dv/dt Capability 1 1 2 2 2 ■ 100% Avalanche Tested 3 3 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. 3 This
8.5. sw4n60d.pdf Size:654K _samwin
SAMWIN SW4N60D N-channel TO-220F/I-PAKN/D-PAK MOSFET BVDSS : 600V Features TO-220F TO-251N TO-252 ID : 4A ■ High ruggedness RDS(ON) : 2.2Ω ■ RDS(ON) (Max 2.2Ω)@VGS=10V ■ Gate Charge (Typ 18nC) ■ Improved dv/dt Capability 1 2 1 1 2 2 ■ 100% Avalanche Tested 2 3 3 3 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produc
8.6. sw4n60v.pdf Size:791K _samwin
SW4N60V SW4N60V SAMWIN N-channel MOSFET IPAK DPAK BVDSS : 600V Features ID : 4.0A ■ High ruggedness RDS(ON) : 2.5ohm ■ RDS(ON) (Max 2.5 Ω)@VGS=10V ■ Gate Charge (Typical 27nC) 2 ■ Improved dv/dt Capability 1 1 2 2 ■ 100% Avalanche Tested 3 3 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produced with advanced super-junction technology
8.7. sw4n60a.pdf Size:393K _samwin
SAMWIN SW4N60A N-channel TO-220F MOSFET BVDSS : 600V Features TO-220F ID : 4.0A ■ High ruggedness RDS(ON) : 2.2ohm ■ RDS(ON) (Max 2.2 Ω)@VGS=10V ■ Gate Charge (Typ 22nC) ■ Improved dv/dt Capability 1 2 2 ■ 100% Avalanche Tested 3 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
