SW4N60K Datasheet and Replacement
Type Designator: SW4N60K
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 106.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 290 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.15 Ohm
Package: TO-251
SW4N60K substitution
SW4N60K Datasheet (PDF)
sw4n60k.pdf

SAMWIN SW4N60K N-channel TO-220F/I-PAK/D-PAK MOSFET BVDSS : 600V Features TO-220F TO-251 TO-252 ID : 4A High ruggedness RDS(ON) : 1.15 RDS(ON) (Max 1.15)@VGS=10V Gate Charge (Typ 13nC) Improved dv/dt Capability 1 1 1 2 2 2 100% Avalanche Tested 2 3 3 3 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produced
ssi4n60b ssi4n60b ssw4n60b.pdf

November 2001SSW4N60B / SSI4N60B600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.0A, 600V, RDS(on) = 2.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 22 nC)planar, DMOS technology. Low Crss ( typical 14 pF)This advanced technology has been especially tailored to
ssw4n60a.pdf

Advanced Power MOSFETFEATURESBVDSS = 600 V Avalanche Rugged TechnologyRDS(on) = 2.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = 4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V2 Lower RDS(ON) : 2.037 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Chara
Datasheet: SW2N65B , SW2N70 , SW3N10 , SW3N80C , SW4N60 , SW4N60A , SW4N60B , SW4N60D , P60NF06 , SW4N60V , SW4N65B , SW4N65D , SW4N65K , SW4N65U , SW4N70B , SW4N70K , SW4N80B .
History: IXTP230N075T2
Keywords - SW4N60K MOSFET datasheet
SW4N60K cross reference
SW4N60K equivalent finder
SW4N60K lookup
SW4N60K substitution
SW4N60K replacement
History: IXTP230N075T2



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