SW4N65K Datasheet and Replacement. Cross Reference Search

SW4N65K Datasheet (PDF)

..1. Size:650K samwin
sw4n65k.pdf pdf_icon

SAMWIN SW4N65K N-channel TO-220F/I-PAK/D-PAK MOSFET BVDSS : 650V Features TO-220F TO-251 TO-252 ID : 4A High ruggedness RDS(ON) : 1.25 RDS(ON) (Max 1.25)@VGS=10V Gate Charge (Typ 13nC) Improved dv/dt Capability 1 1 1 2 2 100% Avalanche Tested 2 2 3 3 3 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produced

8.1. Size:671K samwin
sw4n65d.pdf pdf_icon

SAMWIN SW4N65D N-channel TO-220F/TO-251N/TO-252/TO-251S MOSFET BVDSS : 650V Features TO-220F TO-251N TO-252 TO-251S ID : 4A High ruggedness RDS(ON) : 2.6 RDS(ON) (Max 2.6)@VGS=10V Gate Charge (Typ 18nC) Improved dv/dt Capability 1 1 1 2 100% Avalanche Tested 2 3 1 3 2 2 3 3 2 1. Gate 2. Drain 3. Source General Description 1 Thi

8.2. Size:807K samwin
sw4n65b.pdf pdf_icon

SW4N65BSW4N65BSAMWINN-channel MOSFETTO-220FFeatures BVDSS : 650VID : 4.0A High ruggedness RDS(ON) (Max 2.7 )@VGS=10V RDS(ON) : 2.7ohm Gate Charge (Typical 11nC) Improved dv/dt Capability 1 2 2 100% Avalanche Tested31. Gate 2. Drain 3. Source1General DescriptionThis power MOSFET is produced with advanced VDMOS technology of SAMWIN.3This tec

8.3. Size:568K samwin
sw4n65u.pdf pdf_icon

SAMWIN SW4N65U N-channel TO-220F /IPAK MOSFET TO-220F TO-251N Features BVDSS : 650V ID : 4.0A High ruggedness RDS(ON) (Max 2.6 )@VGS=10V RDS(ON) : 2.6ohm Gate Charge (Typical 17nC) Improved dv/dt Capability 1 1 2 2 2 100% Avalanche Tested 3 3 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produced with advanced VDMO

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .