All MOSFET. SW4N65K Datasheet

 

SW4N65K MOSFET. Datasheet pdf. Equivalent

Type Designator: SW4N65K

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 106.4 W

Maximum Drain-Source Voltage |Vds|: 650 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 4 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 13 nC

Rise Time (tr): 25 nS

Drain-Source Capacitance (Cd): 290 pF

Maximum Drain-Source On-State Resistance (Rds): 1.25 Ohm

Package: TO-251

SW4N65K Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SW4N65K Datasheet (PDF)

0.1. sw4n65k.pdf Size:650K _samwin

SW4N65K
SW4N65K

SAMWIN SW4N65K N-channel TO-220F/I-PAK/D-PAK MOSFET BVDSS : 650V Features TO-220F TO-251 TO-252 ID : 4A ■ High ruggedness RDS(ON) : 1.25Ω ■ RDS(ON) (Max 1.25Ω)@VGS=10V ■ Gate Charge (Typ 13nC) ■ Improved dv/dt Capability 1 1 1 2 2 ■ 100% Avalanche Tested 2 2 3 3 3 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produced

8.1. sw4n65b.pdf Size:807K _samwin

SW4N65K
SW4N65K

SW4N65B SW4N65B SAMWIN N-channel MOSFET TO-220F Features BVDSS : 650V ID : 4.0A ■ High ruggedness ■ RDS(ON) (Max 2.7 Ω)@VGS=10V RDS(ON) : 2.7ohm ■ Gate Charge (Typical 11nC) ■ Improved dv/dt Capability 1 2 2 ■ 100% Avalanche Tested 3 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. 3 This tec

8.2. sw4n65d.pdf Size:671K _samwin

SW4N65K
SW4N65K

SAMWIN SW4N65D N-channel TO-220F/TO-251N/TO-252/TO-251S MOSFET BVDSS : 650V Features TO-220F TO-251N TO-252 TO-251S ID : 4A ■ High ruggedness RDS(ON) : 2.6Ω ■ RDS(ON) (Max 2.6Ω)@VGS=10V ■ Gate Charge (Typ 18nC) ■ Improved dv/dt Capability 1 1 1 2 ■ 100% Avalanche Tested 2 3 1 3 2 2 3 3 2 1. Gate 2. Drain 3. Source General Description 1 Thi

 8.3. sw4n65u.pdf Size:568K _samwin

SW4N65K
SW4N65K

SAMWIN SW4N65U N-channel TO-220F /IPAK MOSFET TO-220F TO-251N Features BVDSS : 650V ID : 4.0A ■ High ruggedness ■ RDS(ON) (Max 2.6 Ω)@VGS=10V RDS(ON) : 2.6ohm ■ Gate Charge (Typical 17nC) ■ Improved dv/dt Capability 1 1 2 2 2 ■ 100% Avalanche Tested 3 3 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produced with advanced VDMO

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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