SW4N65K MOSFET Datasheet: N-Ch, 650V, 4A. Full specification with pinout and replacement list

SW4N65K Specs and Replacement

   Type Designator: SW4N65K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 106.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 290 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.25 Ohm
   Package: TO-251

SW4N65K substitution

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SW4N65K datasheet

..1. Size:650K samwin
sw4n65k.pdf pdf_icon

SAMWIN SW4N65K N-channel TO-220F/I-PAK/D-PAK MOSFET BVDSS 650V Features TO-220F TO-251 TO-252 ID 4A High ruggedness RDS(ON) 1.25 RDS(ON) (Max 1.25 )@VGS=10V Gate Charge (Typ 13nC) Improved dv/dt Capability 1 1 1 2 2 100% Avalanche Tested 2 2 3 3 3 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produced... See More ⇒

8.1. Size:671K samwin
sw4n65d.pdf pdf_icon

SAMWIN SW4N65D N-channel TO-220F/TO-251N/TO-252/TO-251S MOSFET BVDSS 650V Features TO-220F TO-251N TO-252 TO-251S ID 4A High ruggedness RDS(ON) 2.6 RDS(ON) (Max 2.6 )@VGS=10V Gate Charge (Typ 18nC) Improved dv/dt Capability 1 1 1 2 100% Avalanche Tested 2 3 1 3 2 2 3 3 2 1. Gate 2. Drain 3. Source General Description 1 Thi... See More ⇒

8.2. Size:807K samwin
sw4n65b.pdf pdf_icon

SW4N65B SW4N65B SAMWIN N-channel MOSFET TO-220F Features BVDSS 650V ID 4.0A High ruggedness RDS(ON) (Max 2.7 )@VGS=10V RDS(ON) 2.7ohm Gate Charge (Typical 11nC) Improved dv/dt Capability 1 2 2 100% Avalanche Tested 3 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. 3 This tec... See More ⇒

8.3. Size:568K samwin
sw4n65u.pdf pdf_icon

SAMWIN SW4N65U N-channel TO-220F /IPAK MOSFET TO-220F TO-251N Features BVDSS 650V ID 4.0A High ruggedness RDS(ON) (Max 2.6 )@VGS=10V RDS(ON) 2.6ohm Gate Charge (Typical 17nC) Improved dv/dt Capability 1 1 2 2 2 100% Avalanche Tested 3 3 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produced with advanced VDMO... See More ⇒

Detailed specifications: SW4N60 , SW4N60A , SW4N60B , SW4N60D , SW4N60K , SW4N60V , SW4N65B , SW4N65D , IRF1407 , SW4N65U , SW4N70B , SW4N70K , SW4N80B , SW601Q , U55NF06 , UC1764 , UJN1205K .