All MOSFET. SW4N65U Datasheet

 

SW4N65U MOSFET. Datasheet pdf. Equivalent


   Type Designator: SW4N65U
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 250.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 17 nC
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 65 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.6 Ohm
   Package: TO-251N

 SW4N65U Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SW4N65U Datasheet (PDF)

 ..1. Size:568K  samwin
 sw4n65u.pdf

SW4N65U SW4N65U

SAMWIN SW4N65U N-channel TO-220F /IPAK MOSFET TO-220F TO-251N Features BVDSS : 650V ID : 4.0A High ruggedness RDS(ON) (Max 2.6 )@VGS=10V RDS(ON) : 2.6ohm Gate Charge (Typical 17nC) Improved dv/dt Capability 1 1 2 2 2 100% Avalanche Tested 3 3 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produced with advanced VDMO

 8.1. Size:650K  samwin
 sw4n65k.pdf

SW4N65U SW4N65U

SAMWIN SW4N65K N-channel TO-220F/I-PAK/D-PAK MOSFET BVDSS : 650V Features TO-220F TO-251 TO-252 ID : 4A High ruggedness RDS(ON) : 1.25 RDS(ON) (Max 1.25)@VGS=10V Gate Charge (Typ 13nC) Improved dv/dt Capability 1 1 1 2 2 100% Avalanche Tested 2 2 3 3 3 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produced

 8.2. Size:671K  samwin
 sw4n65d.pdf

SW4N65U SW4N65U

SAMWIN SW4N65D N-channel TO-220F/TO-251N/TO-252/TO-251S MOSFET BVDSS : 650V Features TO-220F TO-251N TO-252 TO-251S ID : 4A High ruggedness RDS(ON) : 2.6 RDS(ON) (Max 2.6)@VGS=10V Gate Charge (Typ 18nC) Improved dv/dt Capability 1 1 1 2 100% Avalanche Tested 2 3 1 3 2 2 3 3 2 1. Gate 2. Drain 3. Source General Description 1 Thi

 8.3. Size:807K  samwin
 sw4n65b.pdf

SW4N65U SW4N65U

SW4N65BSW4N65BSAMWINN-channel MOSFETTO-220FFeatures BVDSS : 650VID : 4.0A High ruggedness RDS(ON) (Max 2.7 )@VGS=10V RDS(ON) : 2.7ohm Gate Charge (Typical 11nC) Improved dv/dt Capability 1 2 2 100% Avalanche Tested31. Gate 2. Drain 3. Source1General DescriptionThis power MOSFET is produced with advanced VDMOS technology of SAMWIN.3This tec

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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