UM6J1N MOSFET. Datasheet pdf. Equivalent
Type Designator: UM6J1N
Marking Code: J01
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 0.12 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 0.2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 4 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: UMT6
UM6J1N Transistor Equivalent Substitute - MOSFET Cross-Reference Search
UM6J1N Datasheet (PDF)
..1. Size:105K rohm
um6j1n.pdf
um6j1n.pdf
4V Drive Pch MOSFET UM6J1N Structure Dimensions (Unit : mm) Silicon P-channel MOSFET UMT62.01.3 0.90.65 0.65 0.7 Features (5)(4)1) Two RSU002P03 transistors in a single UMT package. (6)2) The MOSFET elements are independent, eliminating (1) (3)1pin markmutual interference. (2)3) Mounting cost and area can be cut in half. 0.2 0.15Each lead has same dimension
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
