UM6J1N Datasheet and Replacement
Type Designator: UM6J1N
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 0.12 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 4 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: UMT6
UM6J1N substitution
UM6J1N Datasheet (PDF)
um6j1n.pdf

4V Drive Pch MOSFET UM6J1N Structure Dimensions (Unit : mm) Silicon P-channel MOSFET UMT62.01.3 0.90.65 0.65 0.7 Features (5)(4)1) Two RSU002P03 transistors in a single UMT package. (6)2) The MOSFET elements are independent, eliminating (1) (3)1pin markmutual interference. (2)3) Mounting cost and area can be cut in half. 0.2 0.15Each lead has same dimension
Datasheet: SW4N70B , SW4N70K , SW4N80B , SW601Q , U55NF06 , UC1764 , UJN1205K , UJN1208K , IRFB31N20D , UM6K33N , UM6K34N , UPA1716 , UPA1716G , UPA1717 , UPA1717G , UPA1720 , UPA1720G .
History: AM1432NE
Keywords - UM6J1N MOSFET datasheet
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History: AM1432NE



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