All MOSFET. UM6J1N Datasheet

 

UM6J1N Datasheet and Replacement


   Type Designator: UM6J1N
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.12 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 0.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 4 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: UMT6
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UM6J1N Datasheet (PDF)

 ..1. Size:105K  rohm
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UM6J1N

4V Drive Pch MOSFET UM6J1N Structure Dimensions (Unit : mm) Silicon P-channel MOSFET UMT62.01.3 0.90.65 0.65 0.7 Features (5)(4)1) Two RSU002P03 transistors in a single UMT package. (6)2) The MOSFET elements are independent, eliminating (1) (3)1pin markmutual interference. (2)3) Mounting cost and area can be cut in half. 0.2 0.15Each lead has same dimension

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: MCH3484 | DMN30H4D0L

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