UM6J1N Specs and Replacement
Type Designator: UM6J1N
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.12 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 4 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: UMT6
UM6J1N substitution
- MOSFET ⓘ Cross-Reference Search
UM6J1N datasheet
um6j1n.pdf
4V Drive Pch MOSFET UM6J1N Structure Dimensions (Unit mm) Silicon P-channel MOSFET UMT6 2.0 1.3 0.9 0.65 0.65 0.7 Features (5) (4) 1) Two RSU002P03 transistors in a single UMT package. (6) 2) The MOSFET elements are independent, eliminating (1) (3) 1pin mark mutual interference. (2) 3) Mounting cost and area can be cut in half. 0.2 0.15 Each lead has same dimension... See More ⇒
Detailed specifications: SW4N70B, SW4N70K, SW4N80B, SW601Q, U55NF06, UC1764, UJN1205K, UJN1208K, IRF2807, UM6K33N, UM6K34N, UPA1716, UPA1716G, UPA1717, UPA1717G, UPA1720, UPA1720G
Keywords - UM6J1N MOSFET specs
UM6J1N cross reference
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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