UPA1817GR MOSFET Datasheet: P-Ch, 12V, 9A. Full specification with pinout and replacement list

UPA1817GR Specs and Replacement

Type Designator: UPA1817GR

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 132 nS

Cossⓘ - Output Capacitance: 400 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm

Package: TSSOP-8

UPA1817GR substitution

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UPA1817GR datasheet

8.1. Size:202K renesas
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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

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8.3. Size:62K nec
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DATA SHEET MOS FIELD EFFECT TRANSISTOR PA1814 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING (Unit mm) The PA1814 is a switching device which can be 85 driven directly by a 4 V power source. The PA1814 features a low on-state resistance and 1, 5, 8 Drain excellent switching characteristics, and is suitable for 1.2 MAX. 2, 3,... See More ⇒

8.4. Size:72K nec
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DATA SHEET MOS FIELD EFFECT TRANSISTOR PA1819 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING (Unit mm) The PA1819 is a switching device that can be driven 85 directly by a 4.0 V power source. This device features a low on-state resistance and 1 Drain1 1, 2, 3 Source excellent switching characteristics, and is suitable for 1.2 ... See More ⇒