UPA1981 Datasheet and Replacement

DATA SHEETINTEGRATED LOAD SWITCH PA1981N-CHANNEL/P-CHANNEL MOS FET PAIR FOR LOAD SWITCH PACKAGE DRAWING (Unit: mm) DESCRIPTION +0.1+0.10.32 0.050.16 0.06 The PA1981 is a N-Channel/P-Channel MOS FET pair for compact power management in portable electronic equipment where 2.5 to 8 V input and 2.8 A output current capability are needed. This load switch inte

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Preliminary Data Sheet PA1931 R07DS0009EJ0103Rev.1.03May 09, 2012MOS FIELD EFFECT TRANSISTOR Description The PA1931 is a switching device, which can be driven directly by a 4.5 V power source. The PA1931 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. Feat

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Preliminary Data Sheet PA1932TE R07DS0001EJ0100Rev.1.00May 31, 2010MOS FIELD EFFECT TRANSISTOR Description The PA1932TE is a switching device, which can be driven directly by a 4.5 V power source. The PA1932TE features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

201041NEC

201041NEC

201041NEC

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

DATA SHEETMOS FIELD EFFECT TRANSISTORPA1914P-CHANNEL MOS FIELD EFFECT TRANSISTORFOR SWITCHINGDESCRIPTION PACKAGE DRAWING (Unit : mm) The PA1914 is a switching device which can be driven+0.10.32 0.05directly by a 4 V power source. 0.16+0.10.06 The PA1914 features a low on-state resistance and excellentswitching characteristics, and is suitable for applications

DATA SHEETMOS FIELD EFFECT TRANSISTOR PA1951P-CHANNEL MOS FIELD EFFECT TRANSISTORFOR SWITCHINGDESCRIPTION PACKAGE DRAWING (Unit: mm) The PA1951 is a switching device, which can be drivendirectly by a 1.8 V power source.+0.10.32 0.050.16+0.10.06 The device features a low on-state resistance and excellentswitching characteristics, and is suitable f

DATA SHEETMOS FIELD EFFECT TRANSISTORPA1950P-CHANNEL MOS FIELD EFFECT TRANSISTORFOR SWITCHINGDESCRIPTION PACKAGE DRAWING (Unit : mm) The PA1950 is a switching device which can be driven+0.10.32 0.05directly by a 1.8 V power source.0.16+0.10.06 This device features a low on-state resistance and excellentswitching characteristics, and is suitable fo

DATA SHEETMOS FIELD EFFECT TRANSISTORPA1901N-CHANNEL MOS FIELD EFFECT TRANSISTORFOR SWITCHINGDESCRIPTION PACKAGE DRAWING (Unit : mm) The PA1901 is a switching device, which can be driven+0.10.32 0.05directly by a 2.5 V power source.0.16+0.10.06 This device features a low on-state resistance and excellentswitching characteristics, and is suitable f

DATA SHEETMOS FIELD EFFECT TRANSISTORPA1913 P-CHANNEL MOS FIELD EFFECT TRANSISTORFOR SWITCHINGDESCRIPTION PACKAGE DRAWING (Unit : mm) The PA1913 is a switching device which can be driven+0.10.32 0.05directly by a 2.5-V power source. 0.16+0.10.06 The PA1913 features a low on-state resistance and excellentswitching characteristics, and is suitable

DATA SHEETMOS FIELD EFFECT TRANSISTORPA1916P-CHANNEL MOS FIELD EFFECT TRANSISTORFOR SWITCHINGDESCRIPTION PACKAGE DRAWING (Unit: mm) The PA1916 is a switching device which can be driven+0.10.32 0.05directly by a 1.8 V power source.0.16+0.10.06 This device features a low on-state resistance and excellentswitching characteristics, and is suitable for

DATA SHEETMOS FIELD EFFECT TRANSISTOR PA1911AP-CHANNEL MOS FIELD EFFECT TRANSISTORFOR SWITCHINGDESCRIPTION PACKAGE DRAWING (Unit : mm) The PA1911A is a switching device which can be driven+0.10.32 0.05directly by a 2.5 V power source.0.16+0.10.06 The PA1911A features a low on-state resistance and excellentswitching characteristics, and is suita

DATA SHEETMOS FIELD EFFECT TRANSISTOR PA1902N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING (Unit: mm) The PA1902 is a switching device, which can be driven directly by a 4.5 V power source. +0.10.32 0.050.16+0.10.06 This PA1902 features a low on-state resistance and excellent switching characteristics, and is suitable for

DATA SHEETMOS FIELD EFFECT TRANSISTOR PA1915P-CHANNEL MOS FIELD EFFECT TRANSISTORFOR SWITCHINGDESCRIPTION PACKAGE DRAWING (Unit : mm) The PA1915 is a switching device which can be driven+0.10.32 0.05directly by a 2.5-V power source. 0.16+0.10.06 The PA1915 features a low on-state resistance and excellentswitching characteristics, and is suitable f

DATA SHEETMOS FIELD EFFECT TRANSISTORPA1918P-CHANNEL MOS FIELD EFFECT TRANSISTORFOR SWITCHINGDESCRIPTIONPACKAGE DRAWING (Unit: mm) The PA1918 is a switching device, which can be driven+0.1directly by a 4.0 V power source. 0.32 0.050.16+0.10.06 This device features a low on-state resistance and excellentswitching characteristics, and is suitable fo