All MOSFET. RFP14N06L Datasheet

 

RFP14N06L Datasheet and Replacement


   Type Designator: RFP14N06L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id| ⓘ - Maximum Drain Current: 14 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 40(max) nC
   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 185 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: TO220AB
 

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RFP14N06L Datasheet (PDF)

 ..1. Size:83K  intersil
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RFP14N06L

RFD14N06L, RFD14N06LSM, RFP14N06LData Sheet July 1999 File Number 4088.314A, 60V, 0.100 Ohm, Logic Level, FeaturesN-Channel Power MOSFETs 14A, 60VThese are N-Channel power MOSFETs manufactured using rDS(ON) = 0.100the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Modelsizes approaching those of LSI integrated circuits, giveso

 6.1. Size:74K  intersil
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RFP14N06L

RFP14N06Data Sheet July 1999 File Number 4002.314A, 60V, 0.100 Ohm, N-Channel Power FeaturesMOSFET 14A, 60VThis N-Channel power MOSFET is manufactured using the rDS(ON) = 0.100MegaFET process. This process which uses feature sizes Temperature Compensating PSPICE Modelapproaching those of LSI integrated circuits, gives optimumutilization of silicon, resulting in

 7.1. Size:207K  fairchild semi
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RFP14N06L

RFD14N05L, RFD14N05LSM, RFP14N05LData Sheet November 200414A, 50V, 0.100 Ohm, Logic Level, FeaturesN-Channel Power MOSFETs 14A, 50VThese are N-channel power MOSFETs manufactured using rDS(ON) = 0.100the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Modelsizes approaching those of LSI integrated circuits, gives optimum utili

 7.2. Size:381K  fairchild semi
rfd14n05-sm rfp14n05.pdf pdf_icon

RFP14N06L

RFD14N05, RFD14N05SM, RFP14N05Data Sheet January 200214A, 50V, 0.100 Ohm, N-Channel Power FeaturesMOSFETs 14A, 50VThese are N-channel power MOSFETs manufactured using rDS(ON) = 0.100the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Modelsizes approaching those of LSI integrated circuits, gives optimum utilization of silicon

Datasheet: RFP10P03L , RFP12N06RLE , RFP12N10L , RFP12P08 , RFP12P10 , RFP14N05 , RFP14N05L , RFP14N06 , 4435 , RFP15N05L , RFP15N06L , RFP15N08L , RFP15P05 , RFP15P05SM , RFP15P06 , RFP22N10 , RFP25N05 .

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