UPA2560T1H Datasheet. Specs and Replacement
Type Designator: UPA2560T1H
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 2.8 nS
Cossⓘ - Output Capacitance: 65 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: 8-VSOF
UPA2560T1H substitution
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UPA2560T1H datasheet
upa2560 upa2560t1h.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
upa2562t1h.pdf
Preliminary Data Sheet PA2562T1H R07DS0007EJ0100 Rev.1.00 Jul 08, 2010 MOS FIELD EFFECT TRANSISTOR Description The PA2562 is Dual N-channel MOSFETs designed for back light inverters and power management applications of portable equipments. Dual N-channel MOSFETs are assembled in one package, to contribute minimize the equipments. Features 2.5 V drive available Lo... See More ⇒
upa2561t1h.pdf
Preliminary Data Sheet PA2561T1H R07DS0006EJ0100 Rev.1.00 Jul 08, 2010 MOS FIELD EFFECT TRANSISTOR Description The PA2561 is Dual N-channel MOSFETs designed for back light inverters and power management applications of portable equipments. Dual N-channel MOSFETs are assembled in one package, to contribute minimize the equipments. Features 2.5 V drive available Lo... See More ⇒
Detailed specifications: UPA2463T1Q, UPA2464T1Q, UPA2465T1Q, UPA2520T1H, UPA2521T1H, UPA2550, UPA2550T1H, UPA2560, IRF9640, UPA2561T1H, UPA2562T1H, UPA2590T1H, UPA2591T1H, UPA2592T1H, UPA2593T1H, UPA2650T1E, UPA2670T1R
Keywords - UPA2560T1H MOSFET specs
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