OSG55R190AF MOSFET. Datasheet pdf. Equivalent
Type Designator: OSG55R190AF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 104 W
Maximum Drain-Source Voltage |Vds|: 550 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3.7 V
Maximum Drain Current |Id|: 20 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 17.7 nC
Rise Time (tr): 6.7 nS
Drain-Source Capacitance (Cd): 125.9 pF
Maximum Drain-Source On-State Resistance (Rds): 0.19 Ohm
Package: TO251
OSG55R190AF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
OSG55R190AF Datasheet (PDF)
0.1. osg55r190af osg55r190df osg55r190ff osg55r190pf.pdf Size:1119K _oriental_semi
OSG55R190xF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Applications Low R & FOM Lighting DS(on) Extremely low switching loss Hard switching PWM Excellent stability and uniformity Server power supply Easy to drive Charger OSG55R190AF, OSG55R190DF, OSG55R190FF, OSG55R190PF , Enhancement Mode N-Channel Power MOSFET Genera
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