OSG55R190AF MOSFET. Datasheet pdf. Equivalent
Type Designator: OSG55R190AF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 104 W
Maximum Drain-Source Voltage |Vds|: 550 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3.7 V
Maximum Drain Current |Id|: 20 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 17.7 nC
Rise Time (tr): 6.7 nS
Drain-Source Capacitance (Cd): 125.9 pF
Maximum Drain-Source On-State Resistance (Rds): 0.19 Ohm
Package: TO251
OSG55R190AF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
OSG55R190AF Datasheet (PDF)
1.1. osg55r190af osg55r190df osg55r190ff osg55r190pf.pdf 
Size:1119K _update-mosfet
OSG55R190xF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Applications Low R & FOM Lighting DS(on) Extremely low switching loss Hard switching PWM Excellent stability and uniformity Server power supply Easy to drive Charger OSG55R190AF, OSG55R190DF, OSG55R190FF, OSG55R190PF , Enhancement Mode N-Channel Power MOSFET Genera
Datasheet: GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , IRF250 , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL , FDMS3604S , GWM100-01X1-SMD , FDMS3602AS , GWM120-0075X1-SL .
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