All MOSFET. OSG55R190AF Datasheet

 

OSG55R190AF MOSFET. Datasheet pdf. Equivalent

Type Designator: OSG55R190AF

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 104 W

Maximum Drain-Source Voltage |Vds|: 550 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3.7 V

Maximum Drain Current |Id|: 20 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 17.7 nC

Rise Time (tr): 6.7 nS

Drain-Source Capacitance (Cd): 125.9 pF

Maximum Drain-Source On-State Resistance (Rds): 0.19 Ohm

Package: TO251

OSG55R190AF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

OSG55R190AF Datasheet (PDF)

1.1. osg55r190af osg55r190df osg55r190ff osg55r190pf.pdf Size:1119K _oriental_semi

OSG55R190AF OSG55R190AF

OSG55R190xF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Applications  Low R & FOM  Lighting DS(on)  Extremely low switching loss  Hard switching PWM  Excellent stability and uniformity  Server power supply  Easy to drive  Charger OSG55R190AF, OSG55R190DF, OSG55R190FF, OSG55R190PF , Enhancement Mode N-Channel Power MOSFET  Genera

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