All MOSFET. CMB1405 Datasheet

 

CMB1405 MOSFET. Datasheet pdf. Equivalent

Type Designator: CMB1405

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 200 W

Maximum Drain-Source Voltage |Vds|: 55 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 140 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 160 nC

Rise Time (tr): 175 nS

Drain-Source Capacitance (Cd): 1080 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0055 Ohm

Package: TO-263

CMB1405 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CMB1405 Datasheet (PDF)

1.1. cmp1405 cmb1405.pdf Size:1037K _update-mosfet

CMB1405
CMB1405

CMP1405/CMB1405 N-Channel Enhancement Mode Field Effect Transistor General Description Product Summery The 1405 is a N-channel Power MOSFET. BVDSS RDSON ID It has specifically been designed to minimize 55V 5.5m 140A input capacitance and gate charge. The Applications device is therefore suitable in advanced LED power controller high-efficiency switching applications. DC-DC &

1.2. cmp1405 cmb1405.pdf Size:1037K _cmos

CMB1405
CMB1405

CMP1405/CMB1405 N-Channel Enhancement Mode Field Effect Transistor General Description Product Summery The 1405 is a N-channel Power MOSFET. BVDSS RDSON ID It has specifically been designed to minimize 55V 5.5m 140A input capacitance and gate charge. The Applications device is therefore suitable in advanced LED power controller high-efficiency switching applications. DC-DC &

 

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