UPA2714GR Datasheet and Replacement

DATA SHEETMOS FIELD EFFECT TRANSISTORPA2714GRSWITCHINGP-CHANNEL POWER MOS FETDESCRIPTIONPACKAGE DRAWING (Unit: mm) The PA2714GR is P-Channel MOS Field Effect Transistordesigned for power management applications of notebook8 5computers and Li-ion battery protection circuit.1, 2, 3 ; Source4 ; Gate5, 6, 7, 8 ; DrainFEATURES Low on-state resistance

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

DATA SHEETMOS FIELD EFFECT TRANSISTORPA2712GRSWITCHINGP-CHANNEL POWER MOS FETDESCRIPTIONPACKAGE DRAWING (Unit: mm) The PA2712GR is P-Channel MOS Field Effect Transistordesigned for power management applications of notebook8 5computers and Li-ion battery protection circuit.1, 2, 3 ; Source4 ; Gate5, 6, 7, 8 ; DrainFEATURES Low on-state resistance

DATA SHEETMOS FIELD EFFECT TRANSISTORPA2713GRSWITCHINGP-CHANNEL POWER MOS FETDESCRIPTION PACKAGE DRAWING (Unit: mm) The PA2713GR is P-channel MOS Field Effect Transistordesigned for power management applications of notebook 851, 2, 3 : Sourcecomputers and Li-ion battery protection circuit.4 : Gate5, 6, 7, 8: DrainFEATURES Low on-state resistanceRDS

DATA SHEETMOS FIELD EFFECT TRANSISTOR PA2716AGRSWITCHING P-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING (Unit: mm) The PA2716AGR is P-Channel MOS Field Effect8 5Transistor designed for power management applications of 1, 2, 3 : Source4 : Gatenotebook computers and Lithium-Ion battery protection circuit. 5, 6, 7, 8 : Drain FEATURES Low on-state resistan