UPA2719GR MOSFET. Datasheet pdf. Equivalent
Type Designator: UPA2719GR
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 10 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 43 nC
trⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 460 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
Package: SOP-8
UPA2719GR Transistor Equivalent Substitute - MOSFET Cross-Reference Search
UPA2719GR Datasheet (PDF)
upa2719gr.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
upa2719agr.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
upa2717gr.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
upa2718gr.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
upa2718agr.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
upa2717agr.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
upa2716gr.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
upa2715gr.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
upa2714gr.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTORPA2714GRSWITCHINGP-CHANNEL POWER MOS FETDESCRIPTIONPACKAGE DRAWING (Unit: mm) The PA2714GR is P-Channel MOS Field Effect Transistordesigned for power management applications of notebook8 5computers and Li-ion battery protection circuit.1, 2, 3 ; Source4 ; Gate5, 6, 7, 8 ; DrainFEATURES Low on-state resistance
upa2712gr.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTORPA2712GRSWITCHINGP-CHANNEL POWER MOS FETDESCRIPTIONPACKAGE DRAWING (Unit: mm) The PA2712GR is P-Channel MOS Field Effect Transistordesigned for power management applications of notebook8 5computers and Li-ion battery protection circuit.1, 2, 3 ; Source4 ; Gate5, 6, 7, 8 ; DrainFEATURES Low on-state resistance
upa2713gr.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTORPA2713GRSWITCHINGP-CHANNEL POWER MOS FETDESCRIPTION PACKAGE DRAWING (Unit: mm) The PA2713GR is P-channel MOS Field Effect Transistordesigned for power management applications of notebook 851, 2, 3 : Sourcecomputers and Li-ion battery protection circuit.4 : Gate5, 6, 7, 8: DrainFEATURES Low on-state resistanceRDS
upa2716agr.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR PA2716AGRSWITCHING P-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING (Unit: mm) The PA2716AGR is P-Channel MOS Field Effect8 5Transistor designed for power management applications of 1, 2, 3 : Source4 : Gatenotebook computers and Lithium-Ion battery protection circuit. 5, 6, 7, 8 : Drain FEATURES Low on-state resistan
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
History: STH26N25FI
History: STH26N25FI
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