All MOSFET. UPA2755GR Datasheet

 

UPA2755GR Datasheet and Replacement


   Type Designator: UPA2755GR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1.5 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 13 nC
   trⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: SOP-8
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UPA2755GR Datasheet (PDF)

 ..1. Size:217K  rohm
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UPA2755GR

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 7.1. Size:274K  rohm
upa2755agr.pdf pdf_icon

UPA2755GR

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:184K  nec
upa2757gr.pdf pdf_icon

UPA2755GR

DATA SHEETMOS FIELD EFFECT TRANSISTOR PA2757GRSWITCHING N-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING (Unit: mm) The PA2757GR is Dual N-channel MOS Field Effect 8 5Transistors designed for switching application. 1 : Source 12 : Gate 17, 8 : Drain 1FEATURES 3 : Source 24 : Gate 2 Low on-state resistance 5, 6 : Drain 2RDS(on)1 = 36.0 m MAX. (VGS = 10

 8.2. Size:66K  nec
upa2753gr.pdf pdf_icon

UPA2755GR

DATA SHEETMOS FIELD EFFECT TRANSISTORPA2753GRSWITCHINGN-CHANNEL POWER MOS FETDESCRIPTION PACKAGE DRAWING (Unit: mm) The PA2753GR is Dual N-Channel MOS Field Effect8 5Transistor designed for DC/DC converters and power1 ; Source 1management applications of notebook computers.2 ; Gate 17, 8 ; Drain 13 ; Source 2FEATURES4 ; Gate 2 Dual chip type 5,

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History: AONR26309A | HGB020N10S | AP4606P | 2SK3084 | AM90N04-03P | HM100P03 | SI5944DU

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