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UPA2766T1A Spec and Replacement


   Type Designator: UPA2766T1A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 130 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 160 nS
   Cossⓘ - Output Capacitance: 4010 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00088 Ohm
   Package: HVSON

 UPA2766T1A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

UPA2766T1A Specs

 ..1. Size:140K  renesas
upa2766t1a.pdf pdf_icon

UPA2766T1A

Data Sheet PA2766T1A N-channel MOSFET R07DS0883EJ0102 Rev.1.02 30 V , 130 A , 0.88 m Nov 28, 2012 Description The PA2766T1A is N-channel MOS Field Effect Transistor designed for high current switching application. Features VDSS = 30 V (TA = 25 C) Low on-state resistance RDS(on) = 0.88 m MAX. (VGS = 10 V, ID = 46 A) RDS(on) = 1.82 m MAX. (VGS = 4... See More ⇒

 8.1. Size:237K  renesas
upa2763.pdf pdf_icon

UPA2766T1A

Preliminary Data Sheet PA2763 R07DS0003EJ0100 Rev.1.00 May 31, 2010 MOS FIELD EFFECT TRANSISTOR Description The PA2763 is N-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications. Features Low on-state resistance RDS(on)1 = 23.0 m MAX. (VGS = 10 V, ID = 21 A) RDS(on)2 = 28.0 m MAX. (VGS = 8 V, ID = 21 A) ... See More ⇒

 8.2. Size:198K  renesas
upa2761ugr.pdf pdf_icon

UPA2766T1A

Preliminary Data Sheet PA2761UGR R07DS0010EJ0100 Rev.1.00 Jun 01, 2010 MOS FIELD EFFECT TRANSISTOR Description The PA2761UGR is N-Channel MOS Field Effect Transistor designed for power management applications of a notebook computer. Features Low on-state resistance RDS(on)1 = 18.5 m MAX. (VGS = 10 V, ID = 9 A) RDS(on)2 = 30 m MAX. (VGS = 4.5 V, ID = 7 A... See More ⇒

 8.3. Size:140K  renesas
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UPA2766T1A

Data Sheet PA2765T1A N-channel MOSFET R07DS0882EJ0102 Rev.1.02 30 V , 100 A , 1.3 m Nov 28, 2012 Description The PA2765T1A is N-channel MOS Field Effect Transistor designed for high current switching application. Features VDSS = 30 V (TA = 25 C) Low on-state resistance RDS(on) = 1.3 m MAX. (VGS = 10 V, ID = 46 A) RDS(on) = 2.9 m MAX. (VGS = 4.5 ... See More ⇒

Detailed specifications: UPA2755GR , UPA2756GR , UPA2757GR , UPA2761UGR , UPA2762UGR , UPA2763 , UPA2764T1A , UPA2765T1A , STF13NM60N , UPA2770GR , UPA2780GR , UPA2781GR , UPA2782GR , UPA2790GR , UPA2791GR , UPA2792AGR , UPA2792GR .

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