UPA2805UT1L
MOSFET. Datasheet pdf. Equivalent
Type Designator: UPA2805UT1L
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1.5
V
|Id|ⓘ - Maximum Drain Current: 25
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 16.7
nC
trⓘ - Rise Time: 4.3
nS
Cossⓘ -
Output Capacitance: 160
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.01
Ohm
Package: HVSON
UPA2805UT1L
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
UPA2805UT1L
Datasheet (PDF)
..1. Size:289K renesas
upa2805ut1l.pdf 
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.1. Size:165K renesas
upa2812t1l.pdf
Data SheetPA2812T1L R07DS0762EJ0101P-channel MOSFEF Rev.1.01May 28, 201330 V, 30 A, 4.8 m Description The PA2812T1L is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features VDSS = -30 V (TA = 25C) Low on-state resistance RDS(on) = 4.8 m MAX. (VGS = -10 V, ID = -30
9.2. Size:189K renesas
upa2820t1s.pdf
Preliminary Data Sheet PA2820T1S R07DS0751EJ0100Rev.1.00May 25, 2012MOS FIELD EFFECT TRANSISTOR Description The PA2820T1S is N-channel MOS Field Effect Transistor designed for power management applications of a notebook computer and Lithium-Ion battery protection circuit. Features VDSS = 30 V (TA = 25C) Low on-state resistance RDS(on) = 5.3 m MAX. (VGS
9.3. Size:192K renesas
upa2825t1s.pdf
Preliminary Data Sheet PA2825T1S R07DS0755EJ0100Rev.1.00May 25, 2012MOS FIELD EFFECT TRANSISTOR Description The PA2825T1S is N-channel MOS Field Effect Transistor designed for power management applications of a notebook computer and Lithium-Ion battery protection circuit. Features VDSS = 30 V (TA = 25C) Low on-state resistance RDS(on) = 4.6 m MAX. (VGS
9.4. Size:138K renesas
upa2822t1l.pdf
Data SheetPA2822T1L R07DS0754EJ0100Rev.1.00May 25, 2012MOS FIELD EFFECT TRANSISTOR Description The PA2822T1L is N-channel MOS Field Effect Transistor designed for power management applications of a notebook computer and Lithium-Ion battery protection circuit. Features VDSS = 30 V (TA = 25C) Low on-state resistance RDS(on) = 2.6 m MAX. (VGS = 10 V, ID =
9.5. Size:220K renesas
upa2811t1l.pdf
Preliminary Data Sheet R07DS0191EJ0100 PA2811T1L Rev.1.00Jan 11, 2011MOS FIELD EFFECT TRANSISTOR Description The PA2811T1L is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features VDSS -30 V (TA = 25C) Low on-state resistance RDS(on) = 15 m MAX. (VGS = -10 V, ID = -19 A)
9.6. Size:268K renesas
upa2810t1l.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.7. Size:143K renesas
upa2821t1l.pdf
PreliminaryData Sheet PA2821T1L R07DS0753EJ0100Rev.1.00May 25, 2012MOS FIELD EFFECT TRANSISTOR Description The PA2821T1L is N-channel MOS Field Effect Transistor designed for power management applications of a notebook computer and Lithium-Ion battery protection circuit. Features VDSS = 30 V (TA = 25C) Low on-state resistance RDS(on) = 3.8 m MAX. (VGS
9.8. Size:209K renesas
upa2826t1s.pdf
Data SheetPA2826T1S N-channel MOSFET R07DS0989EJ0100Rev.1.0020 V , 27 A , 4.3 m Dec 25, 2012Description The PA2826T1S is N-channel MOS Field Effect Transistor designed for power management applications of portable equipment . Features VDSS = 20 V (TA = 25C) Low on-state resistance RDS(on) = 4.3 m MAX. (VGS = 8.0 V, ID = 13.5 A) 2.5 V Gate-d
9.9. Size:159K renesas
upa2814t1s.pdf
Data SheetPA2814T1S R07DS0776EJ0101P-channel MOSFET Rev.1.01May 28, 201330 V, 24 A, 7.8 m Description The PA2814T1S is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features VDSS = -30 V (TA = 25C) Low on-state resistance RDS(on) = 7.8 m MAX. (VGS = -10 V, ID = -24
9.10. Size:184K renesas
upa2813t1l.pdf
Data SheetPA2813T1L R07DS0763EJ0102P-channel MOSFET Rev.1.02May. 28, 201330 V, 27 A, 6.2 m Description The PA2813T1L is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features VDSS = -30 V (TA = 25C) Low on-state resistance RDS(on) = 6.2 m MAX. (VGS = -10 V, ID = -2
9.11. Size:181K renesas
upa2815t1s.pdf
Data SheetPA2815T1S R07DS0777EJ0101P-channel MOSFET Rev.1.01May 28, 201330 V, 21 A, 11 m Description The PA2815T1S is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features VDSS = -30 V (TA = 25C) Low on-state resistance RDS(on) = 11 m MAX. (VGS = -10 V, ID = -21 A
9.12. Size:140K renesas
upa2816t1s.pdf
Data SheetPA2816T1S R07DS0778EJ0101P-channel MOSFET Rev.1.01May 28, 201330 V, 17 A, 15.5 m Description The PA2816T1S is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features VDSS = -30 V (TA = 25C) Low on-state resistance RDS(on) = 15.5 m MAX. (VGS = -10 V, ID = -
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