UPA2805UT1L PDF and Equivalents Search

 ..1. Size:289K  renesas
 upa2805ut1l.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 9.1. Size:165K  renesas
 upa2812t1l.pdf

Data Sheet PA2812T1L R07DS0762EJ0101 P-channel MOSFEF Rev.1.01 May 28, 2013 30 V, 30 A, 4.8 m Description The PA2812T1L is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features VDSS = -30 V (TA = 25 C) Low on-state resistance RDS(on) = 4.8 m MAX. (VGS = -10 V, ID = -30... See More ⇒

 9.2. Size:189K  renesas
 upa2820t1s.pdf

Preliminary Data Sheet PA2820T1S R07DS0751EJ0100 Rev.1.00 May 25, 2012 MOS FIELD EFFECT TRANSISTOR Description The PA2820T1S is N-channel MOS Field Effect Transistor designed for power management applications of a notebook computer and Lithium-Ion battery protection circuit. Features VDSS = 30 V (TA = 25 C) Low on-state resistance RDS(on) = 5.3 m MAX. (VGS... See More ⇒

 9.3. Size:192K  renesas
 upa2825t1s.pdf

Preliminary Data Sheet PA2825T1S R07DS0755EJ0100 Rev.1.00 May 25, 2012 MOS FIELD EFFECT TRANSISTOR Description The PA2825T1S is N-channel MOS Field Effect Transistor designed for power management applications of a notebook computer and Lithium-Ion battery protection circuit. Features VDSS = 30 V (TA = 25 C) Low on-state resistance RDS(on) = 4.6 m MAX. (VGS... See More ⇒

 9.4. Size:138K  renesas
 upa2822t1l.pdf

Data Sheet PA2822T1L R07DS0754EJ0100 Rev.1.00 May 25, 2012 MOS FIELD EFFECT TRANSISTOR Description The PA2822T1L is N-channel MOS Field Effect Transistor designed for power management applications of a notebook computer and Lithium-Ion battery protection circuit. Features VDSS = 30 V (TA = 25 C) Low on-state resistance RDS(on) = 2.6 m MAX. (VGS = 10 V, ID = ... See More ⇒

 9.5. Size:220K  renesas
 upa2811t1l.pdf

Preliminary Data Sheet R07DS0191EJ0100 PA2811T1L Rev.1.00 Jan 11, 2011 MOS FIELD EFFECT TRANSISTOR Description The PA2811T1L is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features VDSS -30 V (TA = 25 C) Low on-state resistance RDS(on) = 15 m MAX. (VGS = -10 V, ID = -19 A) ... See More ⇒

 9.6. Size:268K  renesas
 upa2810t1l.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 9.7. Size:143K  renesas
 upa2821t1l.pdf

PreliminaryData Sheet PA2821T1L R07DS0753EJ0100 Rev.1.00 May 25, 2012 MOS FIELD EFFECT TRANSISTOR Description The PA2821T1L is N-channel MOS Field Effect Transistor designed for power management applications of a notebook computer and Lithium-Ion battery protection circuit. Features VDSS = 30 V (TA = 25 C) Low on-state resistance RDS(on) = 3.8 m MAX. (VGS ... See More ⇒

 9.8. Size:209K  renesas
 upa2826t1s.pdf

Data Sheet PA2826T1S N-channel MOSFET R07DS0989EJ0100 Rev.1.00 20 V , 27 A , 4.3 m Dec 25, 2012 Description The PA2826T1S is N-channel MOS Field Effect Transistor designed for power management applications of portable equipment . Features VDSS = 20 V (TA = 25 C) Low on-state resistance RDS(on) = 4.3 m MAX. (VGS = 8.0 V, ID = 13.5 A) 2.5 V Gate-d... See More ⇒

 9.9. Size:159K  renesas
 upa2814t1s.pdf

Data Sheet PA2814T1S R07DS0776EJ0101 P-channel MOSFET Rev.1.01 May 28, 2013 30 V, 24 A, 7.8 m Description The PA2814T1S is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features VDSS = -30 V (TA = 25 C) Low on-state resistance RDS(on) = 7.8 m MAX. (VGS = -10 V, ID = -24... See More ⇒

 9.10. Size:184K  renesas
 upa2813t1l.pdf

Data Sheet PA2813T1L R07DS0763EJ0102 P-channel MOSFET Rev.1.02 May. 28, 2013 30 V, 27 A, 6.2 m Description The PA2813T1L is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features VDSS = -30 V (TA = 25 C) Low on-state resistance RDS(on) = 6.2 m MAX. (VGS = -10 V, ID = -2... See More ⇒

 9.11. Size:181K  renesas
 upa2815t1s.pdf

Data Sheet PA2815T1S R07DS0777EJ0101 P-channel MOSFET Rev.1.01 May 28, 2013 30 V, 21 A, 11 m Description The PA2815T1S is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features VDSS = -30 V (TA = 25 C) Low on-state resistance RDS(on) = 11 m MAX. (VGS = -10 V, ID = -21 A... See More ⇒

 9.12. Size:140K  renesas
 upa2816t1s.pdf

Data Sheet PA2816T1S R07DS0778EJ0101 P-channel MOSFET Rev.1.01 May 28, 2013 30 V, 17 A, 15.5 m Description The PA2816T1S is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features VDSS = -30 V (TA = 25 C) Low on-state resistance RDS(on) = 15.5 m MAX. (VGS = -10 V, ID = -... See More ⇒